This version: Mar. 6. 2000
Semiconductor
MSC23Q436D-xxBS9/DS9
4,194,304-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
DESCRIPTION
The MSC23Q436D-xxBS9/DS9 is a 4,194,304-word x 36-bit CMOS dynamic random access memory module which
is composed of eight 16Mb DRAMs (4Mx4) in SOJ packages and one 16Mb DRAM (4/CAS 4Mx4) in SOJ package
mounted with nine decoupling capacitors. This is a 72-pin single in-line memory module. This module supports any
application where high density and large capacity of storage memory are required.
FEATURES
•
4,194,304-word x 36-bit organization
•
72-pin Single In-Line Memory Module
MSC23Q436D-xxBS9 : Gold tab
MSC23Q436D-xxDS9 : Solder tab
•
Single 5V power supply, ±10% tolerance
•
Input
: TTL compatible
•
Output : TTL compatible, 3-state
•
Refresh : 2048cycles/32ms
•
Fast page mode capability
•
/CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
•
Multi-bit test mode capability
PRODUCT FAMILY
Access Time (Max.)
t
RAC
MSC23Q436D-60BS9/DS9
MSC23Q436D-70BS9/DS9
60ns
70ns
t
AA
30ns
35ns
t
CAC
15ns
20ns
Cycle Time
(Min.)
110ns
130ns
Power Dissipation (Max.)
Operating
4455mW
4208mW
Standby
49.5mW
Family
1/9
Semiconductor
MSC23Q436D
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
OPR
T
STG
*: Ta = 25°C
Rating
−0.5
to 7.0
50
9
0 to 70
−40
to 125
Unit
V
mA
W
°C
°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
−0.5
Typ.
5.0
0
Max.
5.5
0
V
CC
+
0.5
0.8
Unit
V
V
V
V
Capacitance
(V
CC
= 5V ±10%, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 - A10)
Input Capacitance (/WE)
Input Capacitance (/RAS0, /RAS2)
Input Capacitance (/CAS0 - /CAS3)
I/O Capacitance (DQ0 - DQ35)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
I/O
Typ.
Max.
65
73
43
28
16
Unit
pF
pF
pF
pF
pF
5/9