EEWORLDEEWORLDEEWORLD

Part Number

Search

EPC2007

Description
TRANS GAN 100V 6A BUMPED DIE
Categorysemiconductor    Discrete semiconductor   
File Size1MB,6 Pages
ManufacturerEPC
Environmental Compliance
Download Datasheet Parametric Compare View All

EPC2007 Overview

TRANS GAN 100V 6A BUMPED DIE

EPC2007 Parametric

Parameter NameAttribute value
FET typeN channel
technologyGaNFET (gallium nitride)
Drain-source voltage (Vdss)100V
Current - Continuous Drain (Id) at 25°C6A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)5V
Rds On (maximum value) when different Id, Vgs30 milliohms @ 6A, 5V
Vgs (th) (maximum value) when different Id2.5V @ 1.2mA
Gate charge (Qg) at different Vgs (maximum value)2.8nC @ 5V
Vgs (maximum value)+6V,-5V
Input capacitance (Ciss) at different Vds (maximum value)205pF @ 50V
FET function-
Power dissipation (maximum)-
Operating temperature-40°C ~ 125°C (TJ)
Installation typesurface mount
Supplier device packagingMold profile (5 electrodes)
Package/casingMold
eGaN® FET DATASHEET
EPC2007
EPC2007 – Enhancement Mode Power Transistor
V
DSS
, 100 V
R
DS(ON)
, 30 mW
I
D
, 6 A
NEW PRODUCT
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coefficient allows very low R
DS(ON)
, while its lateral device structure
and majority carrier diode provide exceptionally low Q
G
and zero Q
RR
. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
V
DS
I
D
V
GS
T
J
T
STG
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C)
Continuous (T
A
= 25˚C,
θ
JA
= 40)
Pulsed (25˚C, Tpulse = 300 µs)
Gate-to-Source Voltage
Gate-to-Source Voltage
Operating Temperature
Storage Temperature
100
120
6
25
6
-5
-40 to 125
-40 to 150
V
V
A
V
˚C
EPC2007 eGaN® FETs are supplied only in
passivated die form with solder bumps
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low R
DS(on)
• Ultra low Q
G
• Ultra small footprint
PARAMETER
Static Characteristics
(T
J
= 25˚C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-to-Source Voltage
Drain Source Leakage
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
Gate Threshold Voltage
Drain-Source On Resistance
TEST CONDITIONS
V
GS
= 0 V, I
D
= 75 µA
V
DS
= 80 V, V
GS
= 0 V
V
GS
= 5 V
V
GS
= -5 V
V
DS
= V
GS
, I
D
= 1.2 mA
V
GS
= 5 V, I
D
= 6 A
MIN
100
TYP
MAX
UNIT
V
20
0.25
0.1
0.7
1.4
24
60
2
0.5
2.5
30
µA
mA
V
Source-Drain Characteristics
(T
J
= 25˚C unless otherwise stated)
V
SD
Source-Drain Forward Voltage
I
S
= 0.5 A, V
GS
= 0 V, T = 25˚C
I
S
= 0.5 A, V
GS
= 0 V, T = 125˚C
1.77
1.82
V
All measurements were done with substrate shorted to source.
Thermal Characteristics
TYP
R
θ
JC
R
θ
JB
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Board
Thermal Resistance, Junction to Ambient (Note 1)
6.9
32
80
˚C/W
˚C/W
˚C/W
Note 1: R
θ
JA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC – EFFICIENT POWER CONVERSION CORPORATION |
WWW.EPC-CO.COM
| COPYRIGHT 2013 |
| PAGE 1

EPC2007 Related Products

EPC2007 EPC9112 EPC9508 EPC9006 EPC9507
Description TRANS GAN 100V 6A BUMPED DIE EVAL BOARD CLASS D WIRELESS DEMO EVAL BOARD GAN ZVS CLASS D AMP BOARD DEV FOR EPC2007 100V EGAN EVAL BOARD GAN ZVS CLASS D AMP
type - Power management Power management Power management Power management
Function - Wireless power/charging Wireless power/charging Half H-bridge driver (external FET) Wireless power/charging
Embedded - no no no no
IC/parts used - EPC2007 EPC2007,EPC8009 EPC2007 EPC2007
Main attributes - - launcher 100V, 5A maximum output GaNFET functionality launcher
What's included - plate plate plate plate
Auxiliary properties - 6.78MHz 6.78MHz GaNFET driver circuit uses 7V ~ 12V voltage 6.78MHz

Recommended Resources

Be careful when reposting to QQ space in the future
I just sent it back yesterday. My girlfriend sent me a text message, asking if I was at work and saying she had something to say. I said no, and she said she was chatting on QQ. She seemed very depres...
DIAG Talking
Design of tft_lcd peripheral integrated drive circuit
Design of tft_lcd peripheral integrated drive circuit...
songbo MCU
English version of Verilog programming experience collection
Verilog programming experience shared with brothers...
eeleader FPGA/CPLD
If you have a temper, you can figure it out with your head?
#includeiostream using namespace std;#define SQUARE(a) ((a)*(a)*(a)) #define SQL(a) ((a)*(a))int main(void) {int a = 5, d = 5, e = 5;int b = 0;int c = 0;int f = 0;c = SQUARE(d++);b = SQUARE(++a); f = ...
shilaike Microcontroller MCU
MCU Minimum System
[i=s]This post was last edited by paulhyde on 2014-9-15 09:20[/i] I want to make a single-chip minimum system recently. I don't know whether I should buy a development board or solder it myself. It sh...
liuyong1989 Electronics Design Contest
[Waiting for you to complain] The first issue of PCB complaints is here~~
[i=s]This post was last edited by okhxyyo on 2015-7-17 13:25[/i] {:1_143:}Thank you all for your active participation. The first PCB appreciation activity of [Waiting for you to complain - take a look...
okhxyyo PCB Design

Popular Articles

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 51  735  1449  1109  1840  2  15  30  23  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号