EEWORLDEEWORLDEEWORLD

Part Number

Search

MT41K256M16TW-107:P

Description
DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA Tray
File Size3MB,217 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

MT41K256M16TW-107:P Overview

DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA Tray

MT41K256M16TW-107:P Parametric

Parameter NameAttribute value
EU restricts the use of certain hazardous substancesCompliant
ECCN (US)EAR99
Part StatusActive
HTS8542.32.00.36
SVHCYes
DRAM TypeDDR3L SDRAM
Chip Density (bit)4G
Organization256Mx16
Number of Internal Banks8
Number of Words per Bank32M
Number of Bits/Word (bit)16
Data Bus Width (bit)16
Maximum Clock Rate (MHz)1866
Maximum Access Time (ns)0.195
Address Bus Width (bit)18
Process TechnologyCMOS
Minimum Operating Supply Voltage (V)1.283
Typical Operating Supply Voltage (V)1.35
Maximum Operating Supply Voltage (V)1.45
Operating Current (mA)130
Minimum Operating Temperature (°C)0
Maximum Operating Temperature (°C)95
Supplier Temperature GradeCommercial
Number of I/O Lines (bit)16
PackagingTray
Supplier PackageFBGA
Pin Count96
Standard Package NameBGA
MountingSurface Mount
Package Height0.92
Package Length14
Package Width8
PCB changed96
Lead ShapeBall
4Gb: x4, x8, x16 DDR3L SDRAM
Description
DDR3L SDRAM
MT41K1G4 – 128 Meg x 4 x 8 banks
MT41K512M8 – 64 Meg x 8 x 8 banks
MT41K256M16 – 32 Meg x 16 x 8 banks
Description
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM
(Die Rev :E) data sheet specifications when running in
1.5V compatible mode.
Self refresh temperature (SRT)
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
Features
• V
DD
= V
DDQ
= 1.35V (1.283–1.45V)
• Backward compatible to V
DD
= V
DDQ
= 1.5V ±0.075V
– Supports DDR3L devices to be backward com-
patible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• T
C
of 105°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
– 16ms, 8192-cycle refresh at >95°C to 105°C
Options
• Configuration
– 1 Gig x 4
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (9mm x 10.5mm) Rev. E
– 78-ball (7.5mm x 10.6mm) Rev. N
– 78-ball (8mm x 10.5mm) Rev. P
• FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) Rev. E
– 96-ball (7.5mm x 13.5mm) Rev. N
– 96-ball (8mm x 14mm) Rev. P
• Timing – cycle time
– 938ps @ CL = 14 (DDR3-2133)
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
• Operating temperature
– Commercial (0°C T
C
+95°C)
– Industrial (–40°C T
C
+95°C)
– Automotive (–40°C T
C
+105°C)
• Revision
Marking
1G4
512M8
256M16
RH
RG
DA
HA
LY
TW
-093
-107
-125
None
IT
AT
:E/:N/:P
Table 1: Key Timing Parameters
Speed Grade
-093
1, 2
-107
1
-125
Notes:
Data Rate (MT/s)
2133
1866
1600
Target
t
RCD-
t
RP-CL
14-14-14
13-13-13
11-11-11
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.09
13.91
13.75
13.09
13.91
13.75
13.09
13.91
13.75
1. Backward compatible to 1600, CL = 11 (-125).
2. Backward compatible to 1866, CL = 13 (-107).
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT41K256M16TW-107:P Related Products

MT41K256M16TW-107:P MT41K256M16TW-107:PTR
Description DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA Tray DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA T/R
EU restricts the use of certain hazardous substances Compliant Compliant
ECCN (US) EAR99 EAR99
Part Status Active Unconfirmed
HTS 8542.32.00.36 8542.32.00.36
DRAM Type DDR3L SDRAM DDR3L SDRAM
Chip Density (bit) 4G 4G
Organization 256Mx16 256Mx16
Number of Internal Banks 8 8
Number of Words per Bank 32M 32M
Number of Bits/Word (bit) 16 16
Data Bus Width (bit) 16 16
Maximum Clock Rate (MHz) 1866 1866
Maximum Access Time (ns) 0.195 0.195
Address Bus Width (bit) 18 18
Process Technology CMOS CMOS
Minimum Operating Supply Voltage (V) 1.283 1.283
Typical Operating Supply Voltage (V) 1.35 1.35
Maximum Operating Supply Voltage (V) 1.45 1.45
Operating Current (mA) 130 130
Maximum Operating Temperature (°C) 95 95
Supplier Temperature Grade Commercial Commercial
Number of I/O Lines (bit) 16 16
Packaging Tray Tape and Reel
Supplier Package FBGA FBGA
Pin Count 96 96
Standard Package Name BGA BGA
Mounting Surface Mount Surface Mount
Package Height 0.92 0.92
Package Length 14 14
Package Width 8 8
PCB changed 96 96
Lead Shape Ball Ball
When using IAR compiler for stm8S103, there is not enough space after writing much code. Does IAR add a lot of its own libraries?
RT, I feel that AT89S51 could write a lot of code back then, and it was also 8K....
lrz123 stm32/stm8
【AN-106 Application Note】A brief discussion on amplifier applications
This application note is intended to explore some of the broad range of applications for operational amplifiers....
EEWORLD社区 ADI Reference Circuit
You [show off your idle time] I have a gift!
[align=left][size=3]It's the end of the year again. Thinking back to the development board exchange group we established at the beginning of the year, it will soon be one year old... [/size][/align][a...
eric_wang Buy&Sell
SigFox Protocol
SigFox wireless technology is based on LTN (Low Throughput Network). It is a WAN-based technology that supports low data rate communications over longer distances. It is used in M2M and IoT applicatio...
Aguilera RF/Wirelessly
An inventor is a device that allows people to invent things.
The inventor, a device that allows people to inventI remember that Mr. Sun Zhengyi, who is known as the emperor of Internet investment, used an interesting inventor to help himself innovate when he wa...
xyh_521 Robotics Development

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2605  530  2508  2629  1433  53  11  51  29  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号