datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > W3HG128M64EEU806D4XXG
PDF
Preview

W3HG128M64EEU806D4XXG

Description
1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM
File Size209KB，14 Pages
ManufacturerWhite Electronic Designs Corporation
Websitehttp://www.wedc.com/
Download Datasheet Compare View All

W3HG128M64EEU806D4XXG Overview

1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM

W3HG128M64EEU806D4XXG Preview

White Electronic Designs
W3HG128M64EEU-D4
ADVANCED*
1GB – 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM
FEATURES
200-pin, Small-Outline DIMM (SO-DIMM), Raw
Card "B"
Fast data transfer rates: PC2-6400*, PC2-5300*,
PC2-4200 and PC2-3200
Utilizes 800*, 667*, 533 and 400 Mb/s DDR2
SDRAM components
V
CC
= V
CCQ
= 1.8V ± 0.1V
V
CCSPD
= 1.7V to 3.6V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Four-bit prefetch architecture
DLL to align DQ and DQS transitions with CK
Multiple internal device banks for concurrent
operation
Supports duplicate output strobe (RDQS/RDQS#)
Programmable CAS# latency (CL): 3, 4, 5* and 6*
Adjustable data-output drive strength
On-Die Termination (ODT)
Posted CAS# latency: 0, 1, 2, 3 and 4
Serial Presence Detect (SPD) with EEPROM
64ms: 8,192 cycle refresh
Gold edge contacts
Single Rank
RoHS Compliant
JEDEC Package option
• 200 Pin (SO-DIMM)
• PCB – 29.20mm (1.150") TYP
NOTE: Consult factory for availability of:
• Vendor source control options
• Industrial temperature option
DESCRIPTION
The W3HG128M64EEU is a 128Mx64 Double Data Rate
2 SDRAM memory module based on 1Gb DDR2 SDRAM
components. The module consists of eight 128Mx8, in
FBGA package mounted on a 200 pin SO-DIMM FR4
substrate.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
OPERATING FREQUENCIES
PC2-6400*
Clock Speed
CL-t
RCD
-t
RP
* Consult factory for availability
PC2-5300*
333MHz
5-5-5
PC2-4200
266MHz
4-4-4
PC2-3200
200MHz
3-3-3
400MHz
6-6-6
March 2006
Rev. 0
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
PIN CONFIGURATION
PIN# SYMBOL PIN# SYMBOL PIN# SYMBOL PIN# SYMBOL
51
DQS2
101
A1
151
DQ42
1
V
REF
2
V
SS
52
DM2
102
A0
152
DQ46
53
V
SS
103
V
CC
153
DQ43
3
V
SS
4
DQ4
54
V
SS
104
V
CC
154
DQ47
5
DQ0
55
DQ18
105
A10/AP
155
V
SS
6
DQ5
56
DQ22
106
BA1
156
V
SS
7
DQ1
57
DQ19
107
BA0
157
DQ48
8
V
SS
58
DQ23
108
RAS#
158
DQ52
9
V
SS
59
V
SS
109
WE#
159
DQ49
10
DM0
60
V
SS
110
CS0#
160
DQ53
11
DQS0#
61
DQ24
111
V
CC
161
V
SS
12
V
SS
62
DQ28
112
V
CC
162
V
SS
13
DQS0
63
DQ25
113
CAS#
163
NC
14
DQ6
64
DQ29
114
ODT0
164
CK1
65
V
SS
115
NC
165
V
SS
15
V
SS
16
DQ7
66
V
SS
116
A13
166
CK1#
17
DQ2
67
DM3
117
V
CC
167
DQS6#
18
V
SS
68
DQS3#
118
V
CC
168
V
SS
19
DQ3
69
NC
119
NC
169
DQS6
20
DQ12
70
DQS3
120
NC
170
DM6
21
V
SS
71
V
SS
121
V
SS
171
V
SS
22
DQ13
72
V
SS
122
V
SS
172
V
SS
23
DQ8
73
DQ26
123
DQ32
173
DQ50
74
DQ30
124
DQ36
174
DQ54
24
V
SS
25
DQ9
75
DQ27
125
DQ33
175
DQ51
26
DM1
76
DQ31
126
DQ37
176
DQ55
27
V
SS
77
V
SS
127
V
SS
177
V
SS
28
V
SS
78
V
SS
128
V
SS
178
V
SS
29
DQS1#
79
CKE0
129
DQS4#
179
DQ56
30
CK0
80
NC
130
DM4
180
DQ60
31
DQS1
81
V
CC
131
DQS4
181
DQ57
32
CK0#
82
V
CC
132
V
SS
182
DQ61
83
NC
133
V
SS
183
V
SS
33
V
SS
34
V
SS
84
NC
134
DQ38
184
V
SS
35
DQ10
85
BA2
135
DQ34
185
DM7
36
DQ14
86
NC
136
DQ39
186
DQS7#
37
DQ11
87
V
CC
137
DQ35
187
V
SS
38
DQ15
88
V
CC
138
V
SS
188
DQS7
39
V
SS
89
A12
139
V
SS
189
DQ58
40
V
SS
90
A11
140
DQ44
190
V
SS
41
V
SS
91
A9
141
DQ40
191
DQ59
42
V
SS
92
A7
142
DQ45
192
DQ62
43
DQ16
93
A8
143
DQ41
193
V
SS
44
DQ20
94
A6
144
V
SS
194
DQ63
45
DQ17
95
V
CC
145
V
SS
195
SDA
46
DQ21
96
V
CC
146
DQS5#
196
V
SS
47
V
SS
97
A5
147
DM5
197
SCL
48
V
SS
98
A4
148
DQS5
198
SA0
49
DQS2#
99
A3
149
V
SS
199
V
CCSPD
50
NC
100
A2
150
V
SS
200
SA1
W3HG128M64EEU-D4
ADVANCED
PIN NAMES
SYMBOL
A0 - A13
ODT0
CK0, CK0#
CK1, CK1#
CKE0
CS0#
RAS#, CAS#, WE#
BA0 - BA2
DM0 - DM7
DQ0 - DQ63
DQS0 - DQS7
DQS0#-DQS7#
SCL
SA0-SA1
SDA
V
CC
V
REF
V
SS
V
CCSPD
NC
DESCRIPTION
Address input
On-Die Termination
Differential Clock Inputs
Differential Clock inputs
Clock Enable input
Chip select
Command Inputs
Bank Address Inputs
Input Data Mask
Data Input/Output
Data Strobe
Serial Clock for Presence Detect
Presence Detect Address Inputs
Serial Presence Detect Data
Power Supply
SSTL_18 reference voltage
Ground
Serial EEPROM Power Supply
No Connect
March 2006
Rev. 0
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
FUNCTIONAL BLOCK DIAGRAM
3Ω
CS0#
DQS0#
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1#
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2#
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3#
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
3Ω
W3HG128M64EEU-D4
ADVANCED
DQS4#
DQS4
DM4
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5#
DQS5
DM5
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS6#
DQS6
DM6
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS7#
DQS7
DM7
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
100Ω
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DM CS# DQS DQS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
BA0-BA2
A0-A13
RAS#
CAS#
WE#
CKE0
ODT0
BA0-BA2: DDR2 SDRAMs
A0-A13: DDR2 SDRAMs
RAS#: DDR2 SDRAMs
CAS#: DDR2 SDRAMs
WE#: DDR2 SDRAMs
CKE0: DDR2 SDRAMs
ODT0: DDR2 SDRAMs
SCL
WP
Serial PD
A0
A1
A2
SDA
CK0
CK0#
100Ω
DDR2 SDRAMs x 4
SA0 SA1
CK1
CK1#
DDR2 SDRAMs x 4
V
CCSPD
V
CC
V
REF
V
SS
Serial PD
DDR2 SDRAMs
DDR2 SDRAMs
DDR2 SDRAMs, EEPROM
NOTE: 1. All resistor values are 22 ohm unless otherwise specified.
March 2006
Rev. 0
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
Symbol
V
CC
V
IN
, V
OUT
T
STG
T
CASE
T
OPR
I
I
Parameter
V
CC
Supply Voltage Relative to V
SS
Voltage on any Pin Relative to V
SS
Storage Temperature
DDR2 SDRAM Device Operating Temperature*
Operating Temperature (Ambient)
Input Leakage Current; Any input 0V ≤ V
IN
≤ V
CC
;
V
REF
input 0V ≤ V
IN
≤0.95V; (All other pins not under
test = 0V)
Min
-0.5
-0.5
-55
0
0
-40
W3HG128M64EEU-D4
ADVANCED
ABSOLUTE MAXIMUM DC CHARACTERISTICS
Max
2.3
2.3
100
85
65
40
Units
V
V
°C
°C
°C
µA
I
OZ
I
VREF
Output Leakage Current; 0V ≤ V
OUT
≤ V
CC
Q; DQs
and ODT are disabled
V
REF
Leakage Current; V
REF
= Valid V
REF
level
Command/Address,
RAS#, CAS#, WE# S#,
CKE
CK, CK#
DM
DQ, DQS, DQS#
-20
-5
-5
-16
20
5
5
16
µA
µA
* T
CASE
specifies as the temperature at the top center of the memory devices.
RECOMMENDED DC OPERATING CONDITIONS
All voltages referenced to V
SS
Parameter
Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
NOTE:
1. V
REF
is expected to equal V
CCQ
/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (non-common mode) on V
REF
may not exceed
±1 percent of the DC value. Peak-to-peak AC noise on V
REF
may not exceed ±2 percent of V
REF
(DC). This measurement is to be taken at the nearest V
REF
bypass capacitor.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal
to V
REF
and must track variations in the DC level of V
REF
.
Symbol
V
CC
V
REF
V
TT
Min
1.7
0.49 x V
CC
V
REF
- 40
Max
1.9
0.51 x V
CC
V
REF
+ 40
Units
V
V
mV
Notes
-
1
2
CAPACITANCE
T
A
= 25°C, f = 100MHz, V
CC
= 1.8V, V
REF
= V
SS
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0)
Input Capacitance (CK0, CK0#)
Input Capacitance (CS0#)
Input Capacitance (DQS0#-DQS17#)
Input Capacitance (BA0-BA1)
Data input/output Capacitance (DQ0-DQ63)
NOTE:
* These capacitance values are based on worst case component values in conjunction with the circuit boards associated parasitic net capacitance.
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
Max
35
35
31
15
31
6
35
6
Unit
pF
pF
pF
pF
pF
pF
pF
pF
March 2006
Rev. 0
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
DDR2 SDRAM components only
V
CC
= +1.8V ± 0.1V
Parameter
Operating one device
bank active-precharge
current;
Operating one device
bank active-read-
precharge current;
Precharge power-down
current;
Precharge quiet
standby current;
Precharge standby
current;
Symbol Condition
I
CC0
W3HG128M64EEU-D4
ADVANCED
DDR2 I
CC
SPECIFICATIONS AND CONDITIONS
806
TBD
665
800
534
640
403
640
Units
mA
t
CK
= t
CK
(I
CC
), t
RC
= t
RC
(I
CC
), t
RAS
= t
RAS
MIN (I
CC
); CKE is HIGH, CS# is
HIGH between valid commands; Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING.
I
OUT
= 0mA; BL = 4, CL = CL(I
CC
), AL = 0; t
CK
= t
CK
(I
CC
), t
RC
= t
RC
(I
CC
),
t
RAS
= t
RAS
MIN (I
CC
), t
RCD
= t
RCD
(I
CC
); CKE is HIGH, CS# is HIGH
between valid commands; Address bus inputs are SWITCHING; Data
pattern is same as I
CC4W
.
All device banks idle; t
CK
= t
CK
(I
CC
); CKE is LOW; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING.
All device banks idle; t
CK
= t
CK
(I
CC
); CKE is HIGH, CS# is HIGH; Other
control and address bus inputs are STABLE; Data bus inputs are
FLOATING.
All device banks idle; t
CK
= t
CK
(I
CC
); CKE is HIGH, CS# is HIGH; Other
control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING.
All device banks open; t
CK
= t
CK
(I
CC
); CKE is LOW;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING.
Fast PDN Exit
MR[12] = 0
Slow PDN Exit
MR[12] = 1
I
CC1
TBD
1,160
760
760
mA
I
CC2P
TBD
56
40
40
mA
I
CC2Q
TBD
480
328
280
mA
I
CC2N
TBD
520
360
280
mA
Active power-down
current;
TBD
TBD
320
80
240
80
200
80
mA
mA
I
CC3P
Active standby current;
I
CC3N
All device banks open; t
CK
= t
CK
(I
CC
), t
RAS
= t
RAS
MAX (I
CC
), t
RP
= t
RP
(I
CC
);
CKE is HIGH, CS# is HIGH between valid commands; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING.
All device banks open, Continuous burst writes; BL = 4, CL = CL (I
CC
),
AL = 0; t
CK
= t
CK
(I
CC
), t
RAS
= t
RAS
MAX (I
CC
), t
RP
= t
RP
(I
CC
); CKE is
HIGH, CS# is HIGH between valid commands; Address bus inputs are
SWITCHING; Data bus inputs are SWITCHING.
All device banks open, Continuous burst reads, I
OUT
= 0mA; BL = 4, CL
= CL (I
CC
), AL = 0; t
CK
= t
CK
(I
CC
), t
RAS
= t
RAS
MAX (I
CC
), t
RP
= t
RP
(I
CC
);
CKE is HIGH, CS# is HIGH between valid commands; Address bus
inputs are SWITCHING; Data bus inputs are SWITCHING.
t
CK
= t
CK
(I
CC
); Refresh command at every t
RFC
(I
CC
) interval; CKE
is HIGH, CS# is HIGH between valid commands; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING.
CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs
are FLOATING; Data bus inputs are FLOATING.
All device banks interleaving reads, I
OUT
= 0mA; BL = 4, CL = CL (I
CC
),
AL = t
RCD
(I
CC
)-1 x t
CK
(I
CC
); t
CK
= t
CK
(I
CC
), t
RC
= t
RC
(I
CC
), t
RRD
= t
RRD
(I
CC
),
t
RCD
= t
RCD
(I
CC
); CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are STABLE during DESELECTs; Data bus inputs
are SWITCHING
TBD
560
400
320
mA
Operating burst write
current;
I
CC4W
TBD
1,440
1,040
960
mA
Operating burst read
current;
I
CC4R
TBD
1,640
1,160
1,080
mA
Burst refresh current;
I
CC5
TBD
2,160
2,000
1,920
mA
Self refresh current;
I
CC6
TBD
56
40
40
mA
Operating device bank
interleave read current;
I
CC7
TBD
2,720
2,360
2,360
mA
Note:
• I
CC
specification is based on
MICRON
components. Other DRAM manufacturers specification may be different.
March 2006
Rev. 0
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

W3HG128M64EEU806D4XXG Related Products

W3HG128M64EEU806D4XXG W3HG128M64EEU-D4 W3HG128M64EEUXXXD4MG W3HG128M64EEUXXXD4IMG W3HG128M64EEUXXXD4SG W3HG128M64EEUXXXD4ISG W3HG128M64EEU665D4XXG W3HG128M64EEU403D4XXG W3HG128M64EEU534D4XXG
Description 1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM 1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM 1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM 1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM 1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM 1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM 1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM 1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM 1GB - 128Mx64 DDR2 SDRAM UNBUFFERED, SO-DIMM

Recommended Resources

Power supply circuit with self-starting function

Microwave oven circuit

Electronic automatic turn-on circuit

Unijunction transistor trigger circuit

Voltage reference source with scalable output current

Low frequency modulator circuit

Could you please introduce the Dap Electronic Chip website?
[size=16px] I recently helped a friend do a research project on electronic chip websites. I have already selected several websites. I also want to know about a website called Dapu Electronic Chip. The...
wangjian801213 Embedded System
RMB appreciation slows down exports of consumer electronics
According to iSuppli, the selling prices of end products in export markets have fallen, while the appreciation of the RMB has made them more expensive, which has brought many challenges to Chinese con...
张无忌1987 Talking
Sharing the process of WEBENCH design + designing power supply circuit for Freescale's imx534 chip
Design requirements: [size=14px] Freescale's imx534 chip power supply circuit [/size] [size=14px] [/size] [size=14px]Power supply requirements: [/size] # Name VLoad ILoad Description 1. Vbus 5 V 0.1 A...
youzizhile Analogue and Mixed Signal
About the shell component of wince6.0
Is there anyone who can help me introduce the shell component?...
Jnfnet Embedded System
Host power management settings
Host power management settings:　　When installing the system, many users often set time limits for the display, hard disk and power supply in the host power management settings in order to achieve the ...
zbz0529 Power technology
Taoxing portable MP3 development board and MP3 voice playback module information release
Taoxing portable MP3 development board is a MP3 learning board tailored for portable functions. It can be powered by 3-4 batteries and the whole machine is only the size of a business card. It condens...
古道热肠MP3 DIY/Open Source Hardware
Shortcut:   E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components

  1. 1825Y0100823MXT
  2. 7301L1PCWZQIS2
  3. ECG-10-1.8432M-L2A
  4. 71656-254
  5. 8681MCM2540LPN38F0
  6. CR0402-16W-304JT
  7. IM820E-6EAZO-01.0000MHZ
  8. PTF65287RBT-10R36
  9. SR24W_R2_00001
  10. P6SMBJ11C_R1_00001
  11. C4201WVA-2x7P-V0-HCS
  12. 201007F200LT4E

Popular Articles

  1. Talk about smart cockpit - head-up display
  2. Aluminum electrolytic capacitor production capacity is unbalanced and prices are rising, with the supply-demand mismatch reaching as high as 1:6
  3. TEDA Technology Investment: Helping Chinese semiconductor companies strengthen their core competitiveness
  4. Semiconductor equipment orders increase, Jingsheng Electromechanical's net profit in 2021 is expected to increase by 114%
  5. Mitsubishi PLC selection criteria
  6. What issues should be paid attention to during the operation of zero-sequence current protection?
  7. See how Elmo servo drives optimize automated guided vehicles (AGVs)
  8. LOTO Oscilloscope_Differential Current Module i01 Measured mA Current Waveform

Technical ResourceMore

  1. Quick and Practical Design of Active Filters_E-book
  2. Anti-interference technology in control engineering
  3. Filter Design with Parasitic Passband Suppression Structure
  4. Introduction to the Features of Ethernet Networking Matrix System
  5. Temperature characteristics of LDMOS power amplifier and design of temperature compensation circuit
  6. PL2303 Driver
  7. Several issues on the design of intermittent flyback transformer
  8. Solar cell module packaging process
  9. Openstack nova source code analysis
  10. Frequency conversion speed regulation device and its commissioning, operation and maintenance

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 2179  1300  2900  1222  843  44  27  59  25  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号