ZVP0120ASTOA datasheet, PDF - EEWORLD Datasheet

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ZVP0120ASTOA: DescriptionMOSFET P-CH 200V 0.11A TO92-3; Categorysemiconductor Discrete semiconductor; File Size116KB，3 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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ZVP0120ASTOA Overview

MOSFET P-CH 200V 0.11A TO92-3

ZVP0120ASTOA Parametric

Parameter Name	Attribute value
FET type	P channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	200V
Current - Continuous Drain (Id) at 25°C	110mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	32 ohms @ 125mA, 10V
Vgs (th) (maximum value) when different Id	3.5V @ 1mA
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	100pF @ 25V
FET function	-
Power dissipation (maximum)	700mW（Ta）
Operating temperature	-
Installation type	Through hole
Supplier device packaging	E-Line (TO-92 compatible)
Package/casing	E-Line-3

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P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94

FEATURES

* 200 Volt V

DS

* R

DS(on)

=32Ω

ZVP0120A

D

G

S

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

E-Line

TO92 Compatible

VALUE

-200

-110

-1

±

20

UNIT

V

mA

A

V

mW

°C

700

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source

Breakdown Voltage

Gate-Source

Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage

Drain Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

SYMBOL MIN. MAX. UNIT CONDITIONS.

BV

DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

3-406

Measured under pulsed conditions. Width=300

µ

s. Duty cycle

≤

2% (2) Sample test.

50

100

25

7

15

12

15

-250

32

-200

-1.5

-3.5

20

-10

-100

V

nA

µ

A

µ

A

I

D

=-1mA, V

GS

=0V

ID=-1mA, V

DS

= V

GS

V

GS

=

±

20V, V

DS

=0V

V

DS

=-200 V, V

GS

=0

V

DS

=-160 V, V

GS

=0V,

T=125°C

(2)

V

DS

=-25 V, V

GS

=-10V

V

GS

=-10V,I

D

=-125mA

V

DS

=-25V,I

D

=-125mA

mA

Ω

mS

pF

ns

V

DS

=-25 V, V

GS

=0V, f=1MHz

V

DD

≈−

25V, I

D

=-125mA

(

1

)

ZVP0120ASTOA Related Products

	ZVP0120ASTOA	ZVP0120AS	ZVP0120ASTOB	ZVP0120ASTZ
Description	MOSFET P-CH 200V 0.11A TO92-3	MOSFET P-CH 200V 0.11A TO92-3	MOSFET P-CH 200V 0.11A TO92-3	MOSFET P-CH 200V 0.11A TO92-3
FET type	P channel	P channel	P channel	P channel
technology	MOSFET (metal oxide)	MOSFET (metal oxide)	MOSFET (metal oxide)	MOSFET (metal oxide)
Drain-source voltage (Vdss)	200V	200V	200V	200V
Current - Continuous Drain (Id) at 25°C	110mA（Ta）	110mA（Ta）	110mA（Ta）	110mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V	10V	10V	10V
Rds On (maximum value) when different Id, Vgs	32 ohms @ 125mA, 10V	32 ohms @ 125mA, 10V	32 ohms @ 125mA, 10V	32 ohms @ 125mA, 10V
Vgs (th) (maximum value) when different Id	3.5V @ 1mA	3.5V @ 1mA	3.5V @ 1mA	3.5V @ 1mA
Vgs (maximum value)	±20V	±20V	±20V	±20V
Input capacitance (Ciss) at different Vds (maximum value)	100pF @ 25V	100pF @ 25V	100pF @ 25V	100pF @ 25V
Power dissipation (maximum)	700mW（Ta）	700mW（Ta）	700mW（Ta）	700mW（Ta）
Installation type	Through hole	Through hole	Through hole	Through hole
Supplier device packaging	E-Line (TO-92 compatible)	TO-92-3	E-Line (TO-92 compatible)	E-Line (TO-92 compatible)
Package/casing	E-Line-3	TO-226-3, TO-92-3 standard body (!--TO-226AA)	E-Line-3	E-Line-3

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