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HT18G A1G

Description
DIODE GEN PURP 1A TS-1
Categorysemiconductor    Discrete semiconductor   
File Size354KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

HT18G A1G Overview

DIODE GEN PURP 1A TS-1

HT18G A1G Parametric

Parameter NameAttribute value
Diode typestandard
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.7V @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)75ns
Current at different Vr - Reverse leakage current5µA @ 1000V
Capacitance at different Vr, F10pF @ 4V,1MHz
Installation typeThrough hole
Package/casingT-18, axial
Supplier device packagingTS-1
Operating Temperature - Junction-55°C ~ 150°C
HT11G - HT18G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction
- High current capability
- High reliability
- High surge current capability
- High efficiency, Low VF
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
TS-1
Molding compound, UL flammability classification rating 94V-0
Paer no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
50
15
95
- 55 to +150
- 55 to +150
1.0
5
150
75
10
HT
11G
50
35
50
HT
12G
100
70
100
HT
13G
200
140
200
HT
14G
300
210
300
1
30
1.3
1.7
HT
15G
400
280
400
HT
16G
600
420
600
HT
17G
800
560
800
HT
18G
1000
700
1000
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D1407005
Version: G15
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