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BR100/03,113

Description
DIAC 28-36V 2A ALF2
CategoryAnalog mixed-signal IC    Trigger device   
File Size16KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BR100/03,113 Overview

DIAC 28-36V 2A ALF2

BR100/03,113 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeDO-35
package instructionHERMETIC SEALED, GLASS PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakover voltage36 V
Minimum breakover voltage28 V
Shell connectionISOLATED
ConfigurationSINGLE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature100 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Repeated peak reverse voltage3 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeDIAC
Base Number Matches1

BR100/03,113 Preview

Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
GENERAL DESCRIPTION
Silicon bidirectional trigger device in a
glass envelope intended for use in
triac and thyristor trigger circuits.
QUICK REFERENCE DATA
SYMBOL
V
(BO)
V
O
I
FRM
PARAMETER
Breakover voltage
Output voltage
Repetitive peak forward current
MIN.
28
7
-
MAX.
36
-
2
UNIT
V
V
A
OUTLINE - SOD27
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
I
FRM
P
tot
T
stg
T
j
PARAMETER
Repetitive peak forward
current
Total power dissipation
Storage temperature
Operating junction
temperature
CONDITIONS
t
10
µs,
T
a
50˚C; f = 60 Hz
T
a
= 50˚C
MIN.
-
-
-55
-
MAX.
2
150
125
100
UNIT
A
mW
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-a
R
th j-lead
PARAMETER
CONDITIONS
MIN.
-
-
TYP.
330
150
MAX. UNIT
-
-
K/W
K/W
Thermal resistance junction to in free air
ambient
Thermal resistance junction to
leads
CHARACTERISTICS
T
a
= 25 ˚C unless otherwise stated.
SYMBOL
V
(BO)
|V
(BO)+
| - |V
(BO)-
|
V
O
I
(BO)
dV
(BO)
/dT
t
r
PARAMETER
Breakover voltage
Breakover voltage symmetry
Output voltage
Breakover current
Temperature coefficient of
V
(BO)
Risetime
CONDITIONS
I = I
(BO)
I = I
(BO)
, see fig: 1
R
L
= 20
Ω;
Circuit of fig: 2
V = V
(BO)
I
p
= 0.5 A; Circuit of fig: 2
MIN.
28
-
7
-
-
-
TYP.
32
-
-
-
0.1
1.5
MAX. UNIT
36
3.5
-
50
-
V
V
V
µA
%/K
µs
February 1996
1
Rev 1.100
Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
I
VBO
D.U.T.
10k
I(BO)I
500k
IT
V(BO)III
V(BO)I
I(BO)III
V
100nF
230 V, RMS, 50Hz
10R
Set load resistance
to 20 Ohms when
measuring output voltage
Vo
50R
Adjust for Ip=0.5A
when measuring risetime
Fig.1. Current-voltage characteristics
Fig.2. Test circuit for output voltage and risetime.
MECHANICAL DATA
Dimensions in mm
4.5
max
0.56
max
1.95
max
24
min
24
min
Fig.3. SOD27.
February 1996
2
Rev 1.100
Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1996
3
Rev 1.100

BR100/03,113 Related Products

BR100/03,113 BR100/03T/R BR100/03/T/R BR100/03
Description DIAC 28-36V 2A ALF2 DIAC, 36 V, DIAC, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 36V, DIAC, DO-35 DIAC, 36 V, DIAC, DO-35
Is it Rohs certified? conform to conform to conform to conform to
Reach Compliance Code unknown compliant not_compliant unknown
Maximum breakover voltage 36 V 36 V 36 V 36 V
Minimum breakover voltage 28 V 28 V 28 V 28 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
JEDEC-95 code DO-35 DO-35 DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 100 °C 100 °C 100 °C 100 °C
Package body material GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL
Trigger device type DIAC DIAC DIAC DIAC
package instruction HERMETIC SEALED, GLASS PACKAGE-2 LONG FORM, O-LALF-W2 - LONG FORM, O-LALF-W2
ECCN code EAR99 - EAR99 EAR99
JESD-609 code e3 e3 e3 -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Maker - NXP NXP NXP

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