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MT25QL02GCBB8E12-0SIT TR

Description
IC FLASH 2G SPI 133MHZ 24TPBGA
Categorystorage   
File Size1MB,90 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

MT25QL02GCBB8E12-0SIT TR Overview

IC FLASH 2G SPI 133MHZ 24TPBGA

MT25QL02GCBB8E12-0SIT TR Parametric

Parameter NameAttribute value
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage2Gb (256M x 8)
Clock frequency133MHz
Write cycle time - words, pages8ms,2.8ms
memory interfaceSPI
Voltage - Power2.7 V ~ 3.6 V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount
Package/casing24-TBGA
Supplier device packaging24-T-PBGA(6x8)
2Gb, 3V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase
MT25QL02GC
Features
• SPI-compatible serial bus interface
• Single and double transfer rate (STR/DTR)
• Clock frequency
– 133 MHz (MAX) for all protocols in STR
– 66 MHz (MAX) for all protocols in DTR
• Dual/quad I/O commands for increased through-
put up to 65 MB/s
• Supported protocols in both STR and DTR
– Extended I/O protocol
– Dual I/O protocol
– Quad I/O protocol
• Execute-in-place (XIP)
• PROGRAM/ERASE SUSPEND operations
• Volatile and nonvolatile configuration settings
• Software reset
• Additional reset pin for selected part numbers
• 3-byte and 4-byte address modes – enable memory
access beyond 128Mb
• Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
– Permanent lock with PROGRAM OTP command
• Erase capability
– Sector erase 64KB uniform granularity
– Subsector erase 4KB, 32KB granularity
• Security and write protection
– Volatile and nonvolatile locking and software
write protection for each 64KB sector
– Nonvolatile configuration locking
– Password protection
– Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
• Electronic signature
– JEDEC-standard 3-byte signature (BA20h)
– Extended device ID: two additional bytes identify
device factory options
• JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
Options
• Voltage
– 2.7–3.6V
• Density
– 1Gb
• Device stacking
– Monolithic
• Lithography
– 45nm
• Die revision
• Pin configuration
– RESET and HOLD#
• Production status
– Engineering samples
• Operating temperature range
– From –40°C to +85°C
– From –40°C to +105°C
• Special options
– Standard
– Automotive
• Standard security
• Packages – JEDEC-standard, RoHS-
compliant
– 24-ball T-PBGA 05/6mm x 8mm
(TBGA24)
• Sector Size
– 64KB
Marking
L
01G
A
B
A
8
ES
IT
AT
S
A
0
12
E
PDF: 09005aef8579b8b8
qlks_2gb_3V_45nm.pdf - Rev. B 07/14 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.

MT25QL02GCBB8E12-0SIT TR Related Products

MT25QL02GCBB8E12-0SIT TR MT25QL02GCBA8E12-0SI
Description IC FLASH 2G SPI 133MHZ 24TPBGA IC FLASH 2G SPI 133MHZ 24TPBGA
memory type non-volatile non-volatile
memory format flash memory flash memory
technology FLASH - NOR FLASH - NOR
storage 2Gb (256M x 8) 2Gb (256M x 8)
Clock frequency 133MHz 133MHz
Write cycle time - words, pages 8ms,2.8ms 8ms,2.8ms
memory interface SPI SPI
Voltage - Power 2.7 V ~ 3.6 V 2.7 V ~ 3.6 V
Operating temperature -40°C ~ 85°C(TA) -40°C ~ 85°C(TA)
Installation type surface mount surface mount
Package/casing 24-TBGA 24-TBGA
Supplier device packaging 24-T-PBGA(6x8) 24-T-PBGA(6x8)
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