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Datasheet> All Categories > storage> storage> JS28F256P33TFE
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JS28F256P33TFE

Description
IC FLASH 256M PARALLEL 56TSOP
Categorystorage    storage   
File Size1MB，92 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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JS28F256P33TFE Overview

IC FLASH 256M PARALLEL 56TSOP

JS28F256P33TFE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionTSSOP, TSSOP56,.8,20
Reach Compliance Codecompliant
Maximum access time105 ns
Other featuresTOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G56
JESD-609 codee3
length18.4 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size4,255
Number of terminals56
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP56,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size16K,64K
Maximum standby current0.00021 A
Maximum slew rate0.031 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
switch bitNO
typeNOR TYPE
width14 mm

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256Mb and 512Mb (256Mb/256Mb),
P33-65nm
Features
Micron Parallel NOR Flash Embedded
Memory (P33-65nm)
RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF,
PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF,
PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE,
PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE
Features
• High performance
– 95ns initial access for Easy BGA
– 105ns initial access for TSOP
– 25ns 16-word asychronous page read mode
– 52 MHz (Easy BGA) with zero WAIT states and
17ns clock-to-data output synchronous burst
read mode
– 4-, 8-, 16-, and continuous word options for burst
mode
– Buffered enhanced factory programming (BEFP)
at 2 MB/s (TYP) using a 512-word buffer
– 3.0V buffered programming at 1.14 MB/s (TYP)
using a 512-word buffer
• Architecture
– MLC: highest density at lowest cost
– Asymmetrically blocked architecture
– Four 32KB parameter blocks: top or bottom con-
figuration
– 128KB main blocks
– Blank check to verify an erased block
• Voltage and power
– V
CC
(core) voltage: 2.3V to 3.6V
– V
CCQ
(I/O) voltage: 2.3V to 3.6V
– Standy current: 65µA (TYP) for 256Mb
– 52 MHz continuous synchronous read current:
21mA (TYP), 24mA (MAX)
• Security
– One-time programmable register: 64 OTP bits,
programmed with unique information from Mi-
cron; 2112 OTP bits available for customer pro-
gramming
– Absolute write protection: V
PP
= V
SS
– Power-transition erase/program lockout
– Individual zero-latency block locking
– Individual block lock-down
– Password access
• Software
– 25μs (TYP) program suspend
– 25μs (TYP) erase suspend
– Flash Data Integrator optimized
– Basic command set and extended function Inter-
face (EFI) command set compatible
– Common flash interface
• Density and Packaging
– 56-lead TSOP package (256Mb only)
– 64-ball Easy BGA package (256Mb, 512Mb)
– QUAD+ and SCSP packages (256Mb, 512Mb)
– 16-bit wide data bus
• Quality and reliabilty
– JESD47 compliant
– Operating temperature: –40°C to +85°C
– Minimum 100,000 ERASE cycles per block
– 65nm process technology
PDF: 09005aef845667ad
p33_65nm_MLC_256Mb-512mb.pdf - Rev. D 2/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.

JS28F256P33TFE Related Products

JS28F256P33TFE PC48F4400P0TB0EE PC48F4400P0TB0EH JS28F256P33BFE PC28F256P33BFE PC28F256P33BFR PC28F256P33TFE RC28F256P33BFE RC28F256P33TFE PC28F256P33BFF TR
Description IC FLASH 256M PARALLEL 56TSOP IC FLASH 512M PARALLEL 64EASYBGA IC FLASH 512M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 56TSOP IC FLASH 256M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 64EASYBGA
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS FLASH - NOR
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to incompatible incompatible -
Maker Micron Technology Micron Technology Micron Technology Micron Technology - - Micron Technology - Micron Technology -
package instruction TSSOP, TSSOP56,.8,20 TBGA, TBGA, TSSOP, TSSOP56,.8,20 TBGA, BGA64,8X8,40 TBGA, BGA64,8X8,40 TBGA, BGA64,8X8,40 BGA-64 BGA-64 -
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant not_compliant unknown -
Maximum access time 105 ns 95 ns 95 ns 105 ns 95 ns 95 ns 95 ns 95 ns 95 ns -
Other features TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE -
startup block TOP BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM TOP BOTTOM TOP -
command user interface YES - - YES YES YES YES YES YES -
Universal Flash Interface YES - - YES YES YES YES YES YES -
Data polling NO - - NO NO NO NO NO NO -
JESD-30 code R-PDSO-G56 R-PBGA-B64 R-PBGA-B64 R-PDSO-G56 R-PBGA-B64 R-PBGA-B64 R-PBGA-B64 R-PBGA-B64 R-PBGA-B64 -
JESD-609 code e3 e1 e1 e3 e1 e1 e1 e1 e1 -
length 18.4 mm 13 mm 13 mm 18.4 mm 13 mm 13 mm 13 mm 13 mm 13 mm -
memory density 268435456 bit 536870912 bit 536870912 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit -
Memory IC Type FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH -
memory width 16 16 16 16 16 16 16 16 16 -
Number of functions 1 1 1 1 1 1 1 1 1 -
Number of departments/size 4,255 - - 4,255 4,255 4,255 4,255 4,255 4,255 -
Number of terminals 56 64 64 56 64 64 64 64 64 -
word count 16777216 words 33554432 words 33554432 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words -
character code 16000000 32000000 32000000 16000000 16000000 16000000 16000000 16000000 16000000 -
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C -
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -
organize 16MX16 32MX16 32MX16 16MX16 16MX16 16MX16 16MX16 16MX16 16MX16 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code TSSOP TBGA TBGA TSSOP TBGA TBGA TBGA TBGA TBGA -
Encapsulate equivalent code TSSOP56,.8,20 - - TSSOP56,.8,20 BGA64,8X8,40 BGA64,8X8,40 BGA64,8X8,40 BGA64,8X8,40 BGA64,8X8,40 -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE, THIN PROFILE, SHRINK PITCH GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE -
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL -
Peak Reflow Temperature (Celsius) 260 260 260 NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED 260 NOT SPECIFIED -
power supply 2.5/3.3 V - - 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V -
Programming voltage 3 V 3 V 3 V 2.7 V 3 V 3 V 3 V 2.7 V 3 V -
Certification status Not Qualified - - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm -
Department size 16K,64K - - 16K,64K 16K,64K 16K,64K 16K,64K 16K,64K 16K,64K -
Maximum standby current 0.00021 A - - 0.00021 A 0.00021 A 0.00021 A 0.00021 A 0.00021 A 0.00021 A -
Maximum slew rate 0.031 mA - - 0.031 mA 0.031 mA 0.031 mA 0.031 mA 0.031 mA 0.031 mA -
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V -
Minimum supply voltage (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V -
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V -
surface mount YES YES YES YES YES YES YES YES YES -
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL -
Terminal surface Matte Tin (Sn) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn) Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER TIN SILVER COPPER -
Terminal form GULL WING BALL BALL GULL WING BALL BALL BALL BALL BALL -
Terminal pitch 0.5 mm 1 mm 1 mm 0.5 mm 1 mm 1 mm 1 mm 1 mm 1 mm -
Terminal location DUAL BOTTOM BOTTOM DUAL BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM -
Maximum time at peak reflow temperature 30 30 30 NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED 30 NOT SPECIFIED -
switch bit NO - - NO NO NO NO NO NO -
type NOR TYPE - - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE -
width 14 mm 10 mm 10 mm 14 mm 10 mm 10 mm 10 mm 10 mm 10 mm -

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