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Datasheet> All Categories > storage> storage> RC28F256P33BFE
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RC28F256P33BFE

Description
IC FLASH 256M PARALLEL 64EASYBGA
Categorystorage    storage   
File Size1MB，92 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
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RC28F256P33BFE Overview

IC FLASH 256M PARALLEL 64EASYBGA

RC28F256P33BFE Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionBGA-64
Contacts64
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time95 ns
Other featuresBOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B64
JESD-609 codee1
length13 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size4,255
Number of terminals64
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA64,8X8,40
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size16K,64K
Maximum standby current0.00021 A
Maximum slew rate0.031 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
switch bitNO
typeNOR TYPE
width10 mm
Base Number Matches1

Preview

Download Datasheet
256Mb and 512Mb (256Mb/256Mb),
P33-65nm
Features
Micron Parallel NOR Flash Embedded
Memory (P33-65nm)
RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF,
PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF,
PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE,
PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE
Features
• High performance
– 95ns initial access for Easy BGA
– 105ns initial access for TSOP
– 25ns 16-word asychronous page read mode
– 52 MHz (Easy BGA) with zero WAIT states and
17ns clock-to-data output synchronous burst
read mode
– 4-, 8-, 16-, and continuous word options for burst
mode
– Buffered enhanced factory programming (BEFP)
at 2 MB/s (TYP) using a 512-word buffer
– 3.0V buffered programming at 1.14 MB/s (TYP)
using a 512-word buffer
• Architecture
– MLC: highest density at lowest cost
– Asymmetrically blocked architecture
– Four 32KB parameter blocks: top or bottom con-
figuration
– 128KB main blocks
– Blank check to verify an erased block
• Voltage and power
– V
CC
(core) voltage: 2.3V to 3.6V
– V
CCQ
(I/O) voltage: 2.3V to 3.6V
– Standy current: 65µA (TYP) for 256Mb
– 52 MHz continuous synchronous read current:
21mA (TYP), 24mA (MAX)
• Security
– One-time programmable register: 64 OTP bits,
programmed with unique information from Mi-
cron; 2112 OTP bits available for customer pro-
gramming
– Absolute write protection: V
PP
= V
SS
– Power-transition erase/program lockout
– Individual zero-latency block locking
– Individual block lock-down
– Password access
• Software
– 25μs (TYP) program suspend
– 25μs (TYP) erase suspend
– Flash Data Integrator optimized
– Basic command set and extended function Inter-
face (EFI) command set compatible
– Common flash interface
• Density and Packaging
– 56-lead TSOP package (256Mb only)
– 64-ball Easy BGA package (256Mb, 512Mb)
– QUAD+ and SCSP packages (256Mb, 512Mb)
– 16-bit wide data bus
• Quality and reliabilty
– JESD47 compliant
– Operating temperature: –40°C to +85°C
– Minimum 100,000 ERASE cycles per block
– 65nm process technology
PDF: 09005aef845667ad
p33_65nm_MLC_256Mb-512mb.pdf - Rev. D 2/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.

RC28F256P33BFE Related Products

RC28F256P33BFE PC48F4400P0TB0EE PC48F4400P0TB0EH JS28F256P33BFE JS28F256P33TFE PC28F256P33BFE PC28F256P33BFR PC28F256P33TFE RC28F256P33TFE PC28F256P33BFF TR
Description IC FLASH 256M PARALLEL 64EASYBGA IC FLASH 512M PARALLEL 64EASYBGA IC FLASH 512M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 56TSOP IC FLASH 256M PARALLEL 56TSOP IC FLASH 256M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 64EASYBGA IC FLASH 256M PARALLEL 64EASYBGA
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS FLASH - NOR
Is it Rohs certified? incompatible conform to conform to conform to conform to conform to conform to conform to incompatible -
package instruction BGA-64 TBGA, TBGA, TSSOP, TSSOP56,.8,20 TSSOP, TSSOP56,.8,20 TBGA, BGA64,8X8,40 TBGA, BGA64,8X8,40 TBGA, BGA64,8X8,40 BGA-64 -
Reach Compliance Code not_compliant compliant compliant compliant compliant compliant compliant compliant unknown -
Maximum access time 95 ns 95 ns 95 ns 105 ns 105 ns 95 ns 95 ns 95 ns 95 ns -
Other features BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE -
startup block BOTTOM BOTTOM BOTTOM BOTTOM TOP BOTTOM BOTTOM TOP TOP -
command user interface YES - - YES YES YES YES YES YES -
Universal Flash Interface YES - - YES YES YES YES YES YES -
Data polling NO - - NO NO NO NO NO NO -
JESD-30 code R-PBGA-B64 R-PBGA-B64 R-PBGA-B64 R-PDSO-G56 R-PDSO-G56 R-PBGA-B64 R-PBGA-B64 R-PBGA-B64 R-PBGA-B64 -
JESD-609 code e1 e1 e1 e3 e3 e1 e1 e1 e1 -
length 13 mm 13 mm 13 mm 18.4 mm 18.4 mm 13 mm 13 mm 13 mm 13 mm -
memory density 268435456 bit 536870912 bit 536870912 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit -
Memory IC Type FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH -
memory width 16 16 16 16 16 16 16 16 16 -
Number of functions 1 1 1 1 1 1 1 1 1 -
Number of departments/size 4,255 - - 4,255 4,255 4,255 4,255 4,255 4,255 -
Number of terminals 64 64 64 56 56 64 64 64 64 -
word count 16777216 words 33554432 words 33554432 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words -
character code 16000000 32000000 32000000 16000000 16000000 16000000 16000000 16000000 16000000 -
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C -
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -
organize 16MX16 32MX16 32MX16 16MX16 16MX16 16MX16 16MX16 16MX16 16MX16 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code TBGA TBGA TBGA TSSOP TSSOP TBGA TBGA TBGA TBGA -
Encapsulate equivalent code BGA64,8X8,40 - - TSSOP56,.8,20 TSSOP56,.8,20 BGA64,8X8,40 BGA64,8X8,40 BGA64,8X8,40 BGA64,8X8,40 -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE -
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL -
Peak Reflow Temperature (Celsius) 260 260 260 NOT SPECIFIED 260 NOT SPECIFIED 260 NOT SPECIFIED NOT SPECIFIED -
power supply 2.5/3.3 V - - 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V -
Programming voltage 2.7 V 3 V 3 V 2.7 V 3 V 3 V 3 V 3 V 3 V -
Certification status Not Qualified - - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm -
Department size 16K,64K - - 16K,64K 16K,64K 16K,64K 16K,64K 16K,64K 16K,64K -
Maximum standby current 0.00021 A - - 0.00021 A 0.00021 A 0.00021 A 0.00021 A 0.00021 A 0.00021 A -
Maximum slew rate 0.031 mA - - 0.031 mA 0.031 mA 0.031 mA 0.031 mA 0.031 mA 0.031 mA -
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V -
Minimum supply voltage (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V -
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V -
surface mount YES YES YES YES YES YES YES YES YES -
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL -
Terminal surface TIN SILVER COPPER Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn) Matte Tin (Sn) Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER Tin/Silver/Copper (Sn/Ag/Cu) TIN SILVER COPPER -
Terminal form BALL BALL BALL GULL WING GULL WING BALL BALL BALL BALL -
Terminal pitch 1 mm 1 mm 1 mm 0.5 mm 0.5 mm 1 mm 1 mm 1 mm 1 mm -
Terminal location BOTTOM BOTTOM BOTTOM DUAL DUAL BOTTOM BOTTOM BOTTOM BOTTOM -
Maximum time at peak reflow temperature 30 30 30 NOT SPECIFIED 30 NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED -
switch bit NO - - NO NO NO NO NO NO -
type NOR TYPE - - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE -
width 10 mm 10 mm 10 mm 14 mm 14 mm 10 mm 10 mm 10 mm 10 mm -
Maker - Micron Technology Micron Technology Micron Technology Micron Technology - - Micron Technology Micron Technology -

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