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S70GL02GT12FHAV10

Description
NOR FlashNor
Categorysemiconductor    Memory IC    NOR flash memory   
File Size359KB,23 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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S70GL02GT12FHAV10 Overview

NOR FlashNor

S70GL02GT12FHAV10 Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Product CategoryNOR flash memory
Installation styleSMD/SMT
Package/boxFBGA-64
seriesS70GL02GT
storage2 Gbit
Interface TypeParallel
organize256 M x 8, 128 M x 16
Timing typeAsynchronous
Data bus width8 bit, 16 bit
Supply voltage - min.2.7 V
Supply voltage - max.3.6 V
Supply current—max.100 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 85 C
EncapsulationTray
storage typeNOR
speed120 ns
structureMirrorBit Eclipse
standardCommon Flash Interface (CFI)
Factory packaging quantity180
S70GL02GT
2-Gbit (256-MB) 3.0 V Flash Memory
General Description
The Cypress S70GL02GT 2-Gigabit MirrorBit
®
Flash memory device is fabricated on 45-nm MirrorBit
®
Eclipse™ process
technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a
Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective
programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s
embedded applications that require higher density, better performance and lower power consumption.
This document contains information for the S70GL02GT device, which is a dual-die stack of two S29GL01GT dies.
For detailed specifications, refer to the discrete die datasheet provided in the below table.
Document
S29GL01GT, S29GL512T Datasheet
Cypress Document Number
002-00247
Distinctive Characteristics
CMOS 3.0-V Core with Versatile I/O™
Two 1024 Megabit (S29GL01GT) in a single 64-ball fortified-
BGA package (see the
S29GL01GT datasheet
for full
specifications)
45 nm MirrorBit Eclipse process technology
Single supply (V
CC
) for read/program/erase (2.7 V to 3.6 V)
Versatile I/O feature
– Wide I/O voltage (V
IO
): 1.65 V to V
CC
×8 and ×16 data bus
16-word/32-byte page read buffer
512-byte programming buffer
– Programming in page multiples, up to a maximum of
512 bytes
Sector erase
– Uniform 128-KB sectors
– S70GL02GT: 2048 sectors
Suspend and Resume commands for Program and Erase
operations
Status Register, Data Polling, and Ready/Busy pin methods
to determine device status
Advanced Sector Protection (ASP)
– Volatile and nonvolatile protection methods for each sector
Separate 1024-bye One Time Program (OTP) array with two
lockable regions
– Each device supports Common Flash Interface (CFI)
WP# input
– Protects the last sector of the device, regardless of sector
protection settings
Temperature range/grade
– Industrial (–40 °C to +85 °C)
– Industrial Plus (–40 °C to +105 °C)
– Automotive, AEC-Q100 Grade 3 (–40 °C to +85 °C)
– Automotive, AEC-Q100 Grade 2 (–40 °C to +105 °C)
100,000 Program-Erase cycles
20-year data retention
Packaging options
– 64-ball LSH fortified BGA, 13 mm × 11 mm
Cypress Semiconductor Corporation
Document Number: 002-13915 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 13, 2018

S70GL02GT12FHAV10 Related Products

S70GL02GT12FHAV10 S70GL02GT12FHAV13 S70GL02GT11FHB010 S70GL02GT11FHV013 S70GL02GT12FHIV10 S70GL02GT11FHV010
Description NOR FlashNor NOR FlashNor NOR FlashNor NOR FlashNor NOR FlashNor NOR FlashNor
Maker Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor Cypress Semiconductor
Product Category NOR flash memory NOR flash memory NOR flash memory NOR flash memory NOR flash memory NOR flash memory
series S70GL02GT S70GL02GT S70GL02GT S70GL02GT S70GL02GT S70GL02GT
Encapsulation Tray Reel Tray Reel Tray Tray
storage type NOR NOR NOR NOR NOR NOR
Factory packaging quantity 180 1600 180 1600 180 180
Installation style SMD/SMT SMD/SMT - SMD/SMT SMD/SMT SMD/SMT
Package/box FBGA-64 FBGA-64 - FBGA-64 FBGA-64 FBGA-64
storage 2 Gbit 2 Gbit - 2 Gbit 2 Gbit 2 Gbit
Interface Type Parallel Parallel - Parallel Parallel Parallel
organize 256 M x 8, 128 M x 16 256 M x 8, 128 M x 16 - 128 M x 16, 256 M x 8 256 M x 8, 128 M x 16 128 M x 16, 256 M x 8
Timing type Asynchronous Asynchronous - Asynchronous Asynchronous Asynchronous
Data bus width 8 bit, 16 bit 8 bit, 16 bit - 8 bit, 16 bit 8 bit, 16 bit 8 bit, 16 bit
Supply voltage - min. 2.7 V 2.7 V - 2.7 V 2.7 V 2.7 V
Supply voltage - max. 3.6 V 3.6 V - 3.6 V 3.6 V 3.6 V
Supply current—max. 100 mA 100 mA - 100 mA 100 mA 100 mA
Minimum operating temperature - 40 C - 40 C - - 40 C - 40 C - 40 C
Maximum operating temperature + 85 C + 85 C - + 105 C + 85 C + 105 C
speed 120 ns 120 ns - 110 ns 120 ns 110 ns
structure MirrorBit Eclipse MirrorBit Eclipse - MirrorBit MirrorBit Eclipse MirrorBit
standard Common Flash Interface (CFI) Common Flash Interface (CFI) - Common Flash Interface (CFI) Common Flash Interface (CFI) Common Flash Interface (CFI)
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