MJD122,
NJVMJD122T4G (NPN),
MJD127 (PNP)
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
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SILICON
POWER TRANSISTOR
8 AMPERES
100 VOLTS, 20 WATTS
Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain: h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free Packages are Available*
DPAK
CASE 369C
STYLE 1
COLLECTOR 2, 4
BASE
1
EMITTER 3
MARKING DIAGRAM
AYWW
J12xG
A
Y
WW
x
G
= Assembly Location
= Year
= Work Week
= 2 or 7
= Pb−Free Package
ORDERING INFORMATION
Device
MJD122
MJD122G
MJD122T4
MJD122T4G
NJVMJD122T4G
MJD127
MJD127G
MJD127T4
MJD127T4G
Package
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
Shipping
†
75 Units/Rail
75 Units/Rail
2,500/Tape & Reel
2,500/Tape & Reel
2,500/Tape & Reel
75 Units/Rail
75 Units/Rail
2,500/Tape & Reel
2,500/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2012
February, 2012
−
Rev. 12
1
Publication Order Number:
MJD122/D
MJD122, NJVMJD122T4G (NPN),
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak
Base Current
Total Power Dissipation
@ T
C
= 25C
Derate above 25C
Total Power Dissipation (Note 1)
@ T
A
= 25C
Derate above 25C
Operating and Storage Junction Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
Value
100
100
5
8
16
120
20
0.16
1.75
0.014
−65
to +150
Unit
Vdc
Vdc
Vdc
Adc
I
B
P
D
mAdc
W
W/C
P
D
W
W/C
C
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Case
Thermal Resistance
Junction−to−Ambient (Note1)
Symbol
R
qJC
R
qJA
Max
6.25
71.4
Unit
C/W
C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
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2
MJD122, NJVMJD122T4G (NPN),
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 30 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4 Adc, V
CE
= 4 Vdc)
(I
C
= 8 Adc, V
CE
= 4 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 4 Adc, I
B
= 16 mAdc)
(I
C
= 8 Adc, I
B
= 80 mAdc)
Base−Emitter Saturation Voltage (Note 2)
(I
C
= 8 Adc, I
B
= 80 mAdc)
Base−Emitter On Voltage
(I
C
= 4 Adc, V
CE
= 4 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(I
C
= 3 Adc, V
CE
= 4 Vdc, f = 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
MJD127
MJD122, NJVMJD122T4G
Small−Signal Current Gain
(I
C
= 3 Adc, V
CE
= 4 Vdc, f = 1 kHz)
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
|h
fe
|
C
ob
−
−
h
fe
300
300
200
−
−
4
−
MHz
pF
h
FE
−
1000
100
−
−
−
−
12,000
−
Vdc
2
4
4.5
2.8
Vdc
Vdc
V
CEO(sus)
I
CEO
I
CBO
I
EBO
100
−
−
−
−
10
10
2
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Max
Unit
V
CE(sat)
V
BE(sat)
V
BE(on)
T
A
T
C
2.5 25
PD, POWER DISSIPATION (WATTS)
2 20
T
C
T
A
SURFACE
MOUNT
1.5 15
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (C)
125
150
Figure 1. Power Derating
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3
MJD122, NJVMJD122T4G (NPN),
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127
20,000
V
CE
= 4 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10,000
7000
5000
3000
2000
25C
1000
700
500
300
200
0.1
- 55C
10,000
5000
3000
2000
25C
1000
500
300
200
0.1
- 55C
T
J
= 150C
20,000
V
CE
= 4 V
NPN MJD122
T
J
= 150C
0.2
0.3
0.5 0.7
1
2
3
5
7
10
0.2
0.3
0.5 0.7
1
2
3
5
7
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
= 25C
2.6
I
C
= 2 A
4A
6A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
3
T
J
= 25C
2.6
I
C
= 2 A
4A
6A
2.2
2.2
1.8
1.8
1.4
1
0.3
1.4
1
0.3
0.5 0.7
1
2
3
5
7
10
20
30
0.5 0.7
1
2
3
5
7
10
20 30
I
B
, BASE CURRENT (mA)
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
3
T
J
= 25C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
3
T
J
= 25C
2.5
2
2
V
BE(sat)
@ I
C
/I
B
= 250
V
BE
@ V
CE
= 4 V
1
V
CE(sat)
@ I
C
/I
B
= 250
0.5
0.1
1.5
V
BE
@ V
CE
= 4 V
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
1.5
1
0.5
0.1
0.2 0.3
0.5 0.7
1
2
3
5
7
10
0.2 0.3
0.5 0.7
1
2
3
5
7
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
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4
MJD122, NJVMJD122T4G (NPN),
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127
V, TEMPERATURE COEFFICIENTS (mV/
C)
V, TEMPERATURE COEFFICIENTS (mV/
C)
+5
+4
+3
+2
+1
0
-1
-2
-3
-4
-5
0.1
0.2 0.3
1
2 3
0.5
I
C
, COLLECTOR CURRENT (AMP)
5
7
10
q
VB
for V
BE
q
VC
for V
CE(sat)
- 55C to 25C
25C to 150C
25C to 150C
*I
C
/I
B
h
FE/3
+5
+4
+3
+2
+1
0
-1
-2
-3
-4
-5
0.1
q
VB
for V
BE
25C to 150C
- 55C to 25C
5
7
10
*q
VC
for V
CE(sat)
- 55C to 25C
*I
C
/I
B
h
FE/3
25C to 150C
NPN MJD122
- 55C to 25C
0.2 0.3
0.5 0.7 1
2 3
I
C
, COLLECTOR CURRENT (AMP)
Figure 5. Temperature Coefficients
10
5
REVERSE
IC, COLLECTOR CURRENT (
A)
10
4
10
3
10
2
10
1
10
0
T
J
= 150C
100C
25C
- 1.2 - 1.4
V
CE
= 30 V
FORWARD
IC, COLLECTOR CURRENT (
A)
10
5
REVERSE
10
4
10
3
10
2
T
J
= 150C
10
1
10
0
100C
V
CE
= 30 V
FORWARD
10
-1
+ 0.6 + 0.4 + 0.2
0 - 0.2 - 0.4 - 0.6 - 0.8 - 1
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
25C
10
-1
- 0.6 - 0.4 - 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
Figure 6. Collector Cut−Off Region
10,000
hfe , SMALL-SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1
2
5
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
PNP
NPN
T
C
= 25C
V
CE
= 4 Vdc
I
C
= 3 Adc
C, CAPACITANCE (pF)
300
T
J
= 25C
200
C
ob
100
70
C
ib
50
PNP
NPN
0.2
0.5
1
2
5
10
20
50
100
30
0.1
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Small−Signal Current Gain
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5
Figure 8. Capacitance
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