Power Transistors
2SB0936
(2SB936)
, 2SB0936A
(2SB936A)
Silicon PNP epitaxial planar type
For low-voltage switching
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
High-speed switching
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
10.0
±0.3
1.5
±0.1
Unit: mm
8.5
±0.2
6.0
±0.2
3.4
±0.3
1.0
±0.1
4.4
±0.5
Parameter
Collector-base voltage
(Emitter open)
2SB0936
2SB0936A
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
a
=
25°C
T
j
T
stg
Rating
−40
−50
−20
−40
−5
−10
−20
40
1.3
150
−55
to
+150
Unit
V
2.0
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Collector-emitter voltage 2SB0936
(Base open)
2SB0936A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
V
(6.5)
V
A
A
W
°C
°C
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Junction temperature
Storage temperature
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
2SB0936
2SB0936A
2SB0936
2SB0936A
I
EBO
h
FE1 *
h
FE2
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
t
on
t
stg
t
f
I
C
= −3
A,
I
B1
= −
0.1 A, I
B2
= 0.1
A
V
CC
= −20
V
0.1
0.5
0.1
µs
µs
µs
V
BE(sat)
V
CE(sat)
f
T
C
ob
I
CBO
V
CB
=
−40
V, I
E
= 0
V
CB
=
−50
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
= −2
V, I
C
= −
0.1 A
V
CE
= −2
V, I
C
= −3
A
I
C
=
−10
A, I
B
=
−
0.33 A
I
C
= −10
A, I
B
= −
0.33 A
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
V
CB
= −10
V, I
E
= 0,
f
=
1 MHz
100
400
45
90
260
−1.5
−
0.6
V
V
MHz
pF
Symbol
V
CEO
Conditions
I
C
= −10
mA, I
B
=
0
Min
−20
−40
−50
−50
−50
µA
µA
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Publication date: April 2003
Q
90 to 180
P
130 to 260
Note) The part number in the parenthesis shows conventional part number.
SJD00017BED
(7.6)
(1.5)
1
2
0.8
±0.1
R = 0.5
R = 0.5
2.54
±0.3
1.0
±0.1
1.4
±0.1
0.4
±0.1
5.08
±0.5
(8.5)
(6.0)
1.3
3
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
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tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
Test/Measurement
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