DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3901
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3901 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3901-ZK
PACKAGE
TO-263 (MP-25ZK)
FEATURES
•
Super low On-state resistance
R
DS(on)1
= 13 mΩ MAX. (V
GS
= 10 V, I
D
= 30 A)
R
DS(on)2
= 16.5 mΩ MAX. (V
GS
= 4.5 V, I
D
= 30 A)
•
Low C
iss
: C
iss
= 1950 pF TYP.
•
Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±20
±60
±150
64
1.5
150
−55
to +150
68
26
68
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
µ
H
3.
R
G
= 25
Ω,
T
ch(peak)
≤
150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17176EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004
2SK3901
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
= 30 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 30 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
18
2.0
36
10.3
12.1
1950
380
150
12
6
48
5.0
2.5
Drain to Source On-state Resistance
13
16.5
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS
= 10 V
I
D
= 60 A
I
F
= 60 A, V
GS
= 0 V
I
F
= 60 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
40
7.5
10.0
0.96
32
45
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D17176EJ1V0DS
2SK3901
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
80
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
175
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
= 150 A
100
µs
T
C
- Case Temperature -
°C
I
D
- Drain Current - A
100
I
D(DC)
= 60 A
10
Power Dissipation Limited
1 ms
1
T
C
= 25°C
Single pulse
10 ms
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 83.3°CW
10
R
th(ch-C)
= 1.94°C/W
1
Single pulse
0.1
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D17176EJ1V0DS
3
2SK3901
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
FORWARD TRANSFER CHARACTERISTICS
1000
100
I
D
- Drain Current - A
150
V
GS
= 10 V
I
D
- Drain Current - A
10
1
0.1
0.01
100
T
A
= 150°C
75°C
25°C
−55°C
4.5 V
50
Pulsed
0
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
1
2
3
4
5
0.001
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
Pulsed
3
V
GS(off)
- Gate Cut-off Voltage - V
2.5
2
1.5
1
0.5
0
-75
-25
25
75
V
DS
= 10 V
I
D
= 1 mA
10
T
A
= 150°C
75°C
25°C
−55°C
1
0.1
0.1
1
10
100
125
175
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
Pulsed
30
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
I
D
= 30 A
Pulsed
30
20
V
GS
= 4.5 V
10
10 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
20
10
0
1
10
100
1000
0
0
2
4
6
8
10 12 14 16 18 20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D17176EJ1V0DS
2SK3901
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
30
25
20
15
10
5
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
1000
V
GS
= 4.5 V
10 V
100
C
rss
I
D
= 30 A
Pulsed
10
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
100
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
t
d(off)
50
40
30
20
10
0
t
d(on)
10
t
f
V
DD
= 30 V
V
GS
= 10 V
R
G
= 0
Ω
1
0.1
1
10
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
DD
= 48 V
30 V
12 V
10
8
6
t
r
V
GS
4
2
0
V
DS
0
10
20
30
40
50
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
I
F
- Diode Forward Current - A
Pulsed
V
GS
= 10 V
t
rr
- Reverse Recovery Time - ns
1000
di/dt = 100 A/
µ
s
V
GS
= 0 V
100
100
10
0V
10
1
0.1
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
1
0.1
1
10
100
I
F
- Diode Forward Current - A
Data Sheet D17176EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
I
D
= 60 A
12
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