UG12JT, UGF12JT, UGB12JT Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage
500 to 600V
Forward Current
12A
Reverse Recovery Time
30ns
Ultrafast Rectifiers
ITO-220AC (UGF12 Series)
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
2
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
CASE
TO-220AC (UG12 Series)
0.415 (10.54) MAX.
DIA.
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
0.055 (1.39)
0.045 (1.14)
0.600 (15.5)
0.580 (14.5)
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
PIN
1
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
PIN 2
0.110 (2.80)
0.100 (2.54)
PIN 1
PIN 2
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
TO-263AB (UGB12 Series)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.055 (1.40)
0.047 (1.19)
1
K
2
0.624 (15.85)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
PIN 1
PIN 2
K - HEATSINK
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout TO-263AB
0.42
(10.66)
0.33
(8.38)
0.63
(17.02)
0.360 (9.14)
0.320 (8.13)
Dimensions in inches
and (millimeters)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.08
(2.032)
0.24
(6.096)
0.105 (2.67)
0.12
(3.05)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Ideally suited for freewheeling diode and power factor
correction applications
• Soft recovery characteristics
• Excellent high temperature switching
• Optimized to reduce switching losses
• Glass passivated chip junction
Mechanical Data
Case:
JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering in accordance with CECC
802 / Reflow guaranteed
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
www.vishay.com
1
Document Number 88758
04-Oct-02
UG12JT, UGF12JT, UGB12JT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25°C unless otherwise noted)
Symbol
V
RRM
V
RWM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
ISOL
UG12HT
500
400
350
500
12
135
–55 to +150
4500
3500
(2)
1500
(3)
(1)
UG12JT
600
480
420
600
Unit
V
V
V
V
A
A
°C
V
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Operating junction and storage temperature range
RMS Isolation voltage (UGF types only)
from terminals to heatsink with t = 1.0 second, RH
≤
30%
Electrical Characteristics
(T
Parameter
Maximum instantaneous
forward voltage
(4)
C
= 25°C unless otherwise noted)
Symbol
I
F
= 12A, T
J
= 25°C
I
F
= 12A, T
J
= 125°C
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
V
F
I
R
t
rr
t
rr
S
I
RM
t
fr
UG12HT
1.75
1.50
30
800
4.0
30
50
0.9
7.5
500
UG12JT
Unit
V
µA
µA
mA
ns
ns
—
A
ns
Maximum DC reverse current at V
RWM
Maximum reverse recovery time at
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
Maximum reverse recovery time at
I
F
= 1.0A, di/dt = 50A/µs, V
R
= 30V, I
rr
= 0.1 I
RM
Typical softness factor (t
b
/t
a
)
I
F
= 12A, di/dt = 240A/µs, V
R
= 400V, I
rr
= 0.1 I
RM
Maximum reverse recovery current at
I
F
= 12A, di/dt = 96A/µs, V
R
= 400V, T
C
= 125°C
Peak forward recovery time at
I
F
= 12A, di/dt = 96A/µs, V
F
= 1.1V
Thermal Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
R
θJC
UG12
1.73
UGF12
3.04
UGB12
1.73
Unit
°C/W
Typical thermal resistance from junction to case
Notes:
(1)
(2)
(3)
(4)
Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
Clip mounting (on case), where leads do overlap heatsink
Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
Pulse test: 300µs pulse width, 1% duty cycle
Ordering Information
Product
UG12HT & UG12JT
UGF12HT & UGF12JT
UGB12HT & UGB12JT
Case
TO-220AC
ITO-220AC
TO-263AB
Package Code
45
45
31
45
81
Package Option
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
www.vishay.com
2
Document Number 88758
04-Oct-02
UG12JT, UGF12JT, UGB12JT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
16
200
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
175
150
125
100
75
50
25
0
14
Average Forward Current (A)
12
10
8
6
4
2
0
0
25
50
75
UGF12HT, UGF12JT
UG12HT, UG12JT,
UGB12HT, UGB12JT
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
100
10,000
Fig. 4 – Typical Reverse Leakage
Characteristics
Instantaneous Reverse Leakage
Current (µA)
T
J
= 125°C
1,000
T
J
= 100°C
Instantaneous Forward Current (A)
10
T
J
= 125°C
1
T
J
= 100°C
T
J
= 25°C
100
0.1
10
T
J
= 25°C
1
0.01
0.1
0.3
0.5
0.7
0.9
1.0
1.3
1.5
1.7
1.9
2.1
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
Stored Charge / Reverse Recovery Time
(nC/ns)
100
Fig. 6 – Reverse Switching Characteristics
400
350
300
12A, 240A/µs, 400V
250
200
150
100
1A, 50A/µs, 30V
50
0
25
50
75
100
125
12A, 240A/µs, 400V
1A, 50A/µs, 30V
t
rr
Q
rr
Junction Capacitance (pF)
10
1
1
10
100
Reverse Voltage (V)
Document Number 88758
04-Oct-02
Junction Temperature (°C)
www.vishay.com
3
京公网安备 11010802033920号
EEWORLD
