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IRKNF102-08HJN

Description
Silicon Controlled Rectifier, 164.85A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size198KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRKNF102-08HJN Overview

Silicon Controlled Rectifier, 164.85A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element

IRKNF102-08HJN Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PUFM-X3
Reach Compliance Codeunknown
Other featuresFAST
Shell connectionISOLATED
Nominal circuit commutation break time25 µs
ConfigurationSINGLE WITH BUILT-IN FREE-WHEELING DIODE
Critical rise rate of minimum off-state voltage400 V/us
JESD-30 codeR-PUFM-X3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current164.85 A
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Trigger device typeSCR
Base Number Matches1
Bulletin I27097 rev. A 09/97
IRK.F102.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
INT-A-pakä Power Modules
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V
RMS
isolating voltage
Industrial standard package
UL E78996 approved
105 A
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
t
q
t
rr
V
DRM
/ V
RRM
T
J
range
IRK.F102..
105
90
233
2850
3000
40.8
37.2
408
20 and 25
2
up to 1200
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
KA
2
√s
µs
µs
V
o
C
www.irf.com
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