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CFA0103-L1

Description
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size982KB,2 Pages
ManufacturerMimix Broadband (MACOM)
Websitehttp://www.macom.com
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CFA0103-L1 Overview

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4

CFA0103-L1 Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-CRDB-F4
Contacts4
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage8 V
FET technologyHIGH ELECTRON MOBILITY
highest frequency bandKU BAND
JESD-30 codeO-CRDB-F4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)10 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
Low Noise GaAs FETs
July 2006 - Rev 31-Jul-06
Features
High Gain
Super Low Noise
Pseudomorphic HEMT
70 Mil Hermetic Package
CFA0103
Applications
Satellite Receivers
Point-to-Point Radio Receivers
Commercial Communications
Defense Electronics
General Description
The CFA0103-L series is a family of low noise, high-gain FETs intended for satellite and point-to-point radio receiver
applications. This family of devices is assembled in an industry standard 70 mil hermetic package. This family of high
reliability devices is ideally suited for operation-critical applications where reliability and performance are required.
Typical Noise Parameters
(Vds = 3V, Ids = 15 mA)
Freq
(GHz)
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
NF
opt
0.39
0.47
0.57
0.69
0.84
1.00
1.18
1.38
1.60
G
A
Gamma Opt Rn/50
(dB) Mag Ang
0.42
23.6 0.87
36
0.34
18.3 0.77
71
0.27
15.2 0.69 100
0.22
13.0 0.63 124
0.18
11.5 0.58 147
0.16
10.6 0.53 171
0.15
10.1 0.49 -163
0.16
9.9
0.46 -132
0.18
9.8
0.42
-94
Absolute Maximum Ratings
Drain-Source Voltage (Vds)
Gate-Source Voltage (Vgs)
Drain Current (Ids)
Continuous Dissipation (Pt)
RF Power In (Pin)
Channel Temperature (Tch)
Storage Temperature (Tstg)
8V
-5 V
Idss
800 mW
+17 dBm
175 ºC
-65 ºC to +175 ºC
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Bias
Parameter
NFopt
Ga
IS211
2
P1dB
gm
Idss
Vp
BVgd
Rth
Vds (V)
3.0
3.0
3.0
6.0
Vds = 3.0V
Vds = 3.0V
Vds = 3.0V
Igd = 100 uA
Ids (mA)
15.0
15.0
15.0
40.0
Vgs = V
Vgs = 0V
Ids = 1 mA
Frequency
(GHz)
12.0
12.0
2.0
10.0
18.0
12.0
Units
dB
dB
dB
dB
dB
dBm
mS
mA
Volts
Volts
ºC/W
Grade
L1
L2
L3
L1
L2
L3
Min
-
-
-
10.0
10.0
8.0
Typ
0.7
0.9
0.9
11.0
11.0
9.0
13.0
9.6
7.2
19.0
90.0
60.0
-1.3
-8.0
250
Max
0.8
1.0
1.2
-
-
-
30.0
-0.5
-5.5
120.0
-2.5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 2
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

CFA0103-L1 Related Products

CFA0103-L1 CFA0103-L2 CFA0103-L CFA0103-L3
Description RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4 Transistor, RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMATIC PACKAGE-4
package instruction DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4 , DISK BUTTON, O-CRDB-F4
Reach Compliance Code unknown unknown unknow unknow
Contacts 4 4 - 4
Other features HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY
Shell connection SOURCE SOURCE - SOURCE
Configuration SINGLE SINGLE - SINGLE
Minimum drain-source breakdown voltage 8 V 8 V - 8 V
FET technology HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY - HIGH ELECTRON MOBILITY
highest frequency band KU BAND KU BAND - KU BAND
JESD-30 code O-CRDB-F4 O-CRDB-F4 - O-CRDB-F4
Number of components 1 1 - 1
Number of terminals 4 4 - 4
Operating mode DEPLETION MODE DEPLETION MODE - DEPLETION MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND - ROUND
Package form DISK BUTTON DISK BUTTON - DISK BUTTON
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL
Minimum power gain (Gp) 10 dB 10 dB - 8 dB
Certification status Not Qualified Not Qualified - Not Qualified
surface mount YES YES - YES
Terminal form FLAT FLAT - FLAT
Terminal location RADIAL RADIAL - RADIAL
transistor applications AMPLIFIER AMPLIFIER - AMPLIFIER
Transistor component materials GALLIUM ARSENIDE GALLIUM ARSENIDE - GALLIUM ARSENIDE
Maker - Mimix Broadband (MACOM) Mimix Broadband (MACOM) Mimix Broadband (MACOM)

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