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3SK165A-0

Description
GaAs N-channel Dual Gate MES FET
CategoryDiscrete semiconductor    The transistor   
File Size37KB,5 Pages
ManufacturerSONY
Websitehttp://www.sony.co.jp
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3SK165A-0 Overview

GaAs N-channel Dual Gate MES FET

3SK165A-0 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Maximum drain current (ID)0.08 A
FET technologyMETAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.025 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)16 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
3SK165A
GaAs N-channel Dual Gate MES FET
Description
The 3SK165A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular, cordless phone.
Features
Low voltage operation
Low noise: NF = 1.2dB (typ.) at 800MHz
High gain: Ga = 20dB (typ) at 800MHz
High stability
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings
(Ta = 25°C)
Drain to source voltage
V
DSX
8
Gate 1 to source voltage
V
G1S
–6
Gate 2 to source voltage
V
G2S
–6
Drain current
I
D
80
Allowable power dissipation
P
D
150
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96Y12-PS

3SK165A-0 Related Products

3SK165A-0 3SK165 3SK165A 3SK165A-1
Description GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
Reach Compliance Code unknow unknow - unknow
FET technology METAL SEMICONDUCTOR METAL SEMICONDUCTOR - METAL SEMICONDUCTOR
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL
Base Number Matches 1 1 - 1
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