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3SK165A

Description
GaAs N-channel Dual Gate MES FET
File Size37KB,5 Pages
ManufacturerSONY
Websitehttp://www.sony.co.jp
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3SK165A Overview

GaAs N-channel Dual Gate MES FET

3SK165A
GaAs N-channel Dual Gate MES FET
Description
The 3SK165A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular, cordless phone.
Features
Low voltage operation
Low noise: NF = 1.2dB (typ.) at 800MHz
High gain: Ga = 20dB (typ) at 800MHz
High stability
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings
(Ta = 25°C)
Drain to source voltage
V
DSX
8
Gate 1 to source voltage
V
G1S
–6
Gate 2 to source voltage
V
G2S
–6
Drain current
I
D
80
Allowable power dissipation
P
D
150
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96Y12-PS

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