3SK165A
GaAs N-channel Dual Gate MES FET
Description
The 3SK165A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular, cordless phone.
Features
•
Low voltage operation
•
Low noise: NF = 1.2dB (typ.) at 800MHz
•
High gain: Ga = 20dB (typ) at 800MHz
•
High stability
Application
UHF band amplifier, mixer and oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings
(Ta = 25°C)
•
Drain to source voltage
V
DSX
8
•
Gate 1 to source voltage
V
G1S
–6
•
Gate 2 to source voltage
V
G2S
–6
•
Drain current
I
D
80
•
Allowable power dissipation
P
D
150
•
Channel temperature
Tch
150
•
Storage temperature
Tstg
–55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96Y12-PS
3SK165A
Electrical Characteristics
Item
Drain cut-off current
Symbol
I
DSX
Condition
V
DS
= 8V
V
G1S
= –4V
V
G2S
= 0V
V
G1S
= –4V
V
G2S
= 0V
V
DS
= 0V
V
G2S
= –4V
V
G1S
= 0V
V
DS
= 0V
V
DS
= 5V
V
G1S
= 0V
V
G2S
= 0V
Min.
Typ.
(Ta = 25°C)
Max.
100
Unit
µA
Gate 1 to source current
I
G1SS
–20
µA
Gate 2 to source current
I
G2SS
–20
µA
Drain saturation current
I
DSS
20
55
mA
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
V
DS
= 5V
V
G1S
(OFF) I
D
= 100µA
V
G2S
= 0V
V
DS
= 5V
V
G2S
(OFF) I
D
= 100µA
V
G1S
= 0V
gm
Ciss
Crss
NF
Ga
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1kHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1MHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 800MHz
–1
–4
V
–1
–4
V
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
∗
I
DSS
classification
Product name classification
3SK165A-0
3SK165A-1
15
22
0.5
7.5
1.2
1.0
25
2.5
ms
pF
fF
dB
dB
16
20
I
DSS
RANK
20 to 55mA
20 to 35mA
Typical Characteristics
(Ta = 25°C)
I
D
vs. V
DS
50
(V
G2S
= 1.5V)
40
V
G1S
= 0V
–0.2V
30
–0.4V
–0.6V
20
–0.8V
–1.0V
10
–1.2V
–1.4V
–1.6V
–1.8V
0
2
4
6
V
DS
– Drain to source voltage [V]
8
40
50
(V
DS
= 5V)
V
G2S
= 1.5V
1.0V
0.5V
30
0V
20
–0.5V
–1.0V
–1.5V
0
–2.0
–1.5
–1.0
–0.5
V
G1S
– Gate 1 to source voltage [V]
0
I
D
vs. V
G1S
I
D
– Drain current [mA]
I
D
– Drain current [mA]
10
0
–2–
3SK165A
I
D
vs. V
G2S
50
(V
DS
= 5V)
40
50
(V
DS
= 5V)
gm vs. V
G1S
gm – Forward transfer admittance [ms]
40
V
G2S
= 1.5V
I
D
– Drain current [mA]
30
20
V
G1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
30
20
1.0V
0.5V
0V
–0.5V
–1.0V
–1.5
–1.0
–0.5
V
G1S
– Gate 1 to source voltage [V]
0
10
10
0
–2.0
–1.5
–1.0
–0.5
V
G2S
– Gate 2 to source voltage [V]
0
0
–2.0
NF vs. V
G1S
6
(V
DS
= 5V, f = 800MHz)
5
V
G2S
= 0.5V
25
30
Ga vs. V
G1S
(V
DS
= 5V, f = 800MHz)
NF – Noise figure [dB]
V
G2S
= 1.5V
Ga – Gain [dB]
4
20
1.0V
15
0.5V
10
3
1.0V
1.5V
2
1
5
0
–2.0 –1.8 –1.6 –1.4–1.2 –1.0–0.8 –0.6 –0.4–0.2 0 0.2
V
G1S
– Gate 1 to source voltage [V]
0
–2.0–1.8 –1.6 –1.4–1.2–1.0–0.8 –0.6 –0.4–0.2 0 0.2
V
G1S
– Gate 1 to source voltage [V]
NF, Ga vs. I
D
3.0
(V
DS
= 5V, V
G2S
= 1.5V, f = 800MHz)
2.5
25
Ga
30
3.0
NF, Ga vs. f
40
(V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
NFmin – Minimum noise figure [dB]
2.5
35
NF – Noise figure [dB]
Ga – Gain [dB]
Ga
1.5
NF
1.0
15
1.5
25
10
1.0
NFmin
20
0.5
5
0.5
15
0
0
2
4
6 8 10 12 14 16 18 20 22
I
D
– Drain current [mA]
0
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
f – Frequency [GHz]
10
–3–
Ga – Gain [dB]
2.0
20
2.0
30
3SK165A
S-parameter vs. Frequency Characteristics (V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S11
MAG
0.999
0.998
0.991
0.984
0.980
0.970
0.964
0.956
0.949
0.938
0.927
0.911
0.898
0.882
0.868
0.856
0.838
0.824
0.809
0.792
ANG
–1.8
–3.7
–5.7
–7.8
–10.0
–12.2
–14.1
–16.1
–17.9
–19.7
–21.3
–22.8
–24.4
–25.8
–27.4
–29.0
–30.2
–31.5
–32.9
–34.1
MAG
2.110
2.105
2.097
2.094
2.083
2.070
2.058
2.048
2.039
2.021
2.008
1.990
1.973
1.954
1.941
1.928
1.901
1.888
1.865
1.846
S21
ANG
176.7
173.0
169.7
166.4
162.7
159.5
156.1
152.8
149.4
146.0
142.8
139.6
136.3
133.3
130.0
126.8
123.7
120.6
117.3
114.1
MAG
0.001
0.002
0.004
0.004
0.005
0.006
0.007
0.007
0.008
0.008
0.009
0.010
0.011
0.011
0.011
0.011
0.012
0.012
0.013
0.013
S12
ANG
73.3
91.6
80.5
85.0
84.9
84.7
83.2
82.5
82.0
78.1
84.4
76.7
77.8
80.9
80.0
80.5
74.3
79.2
80.6
79.5
MAG
0.970
0.968
0.965
0.963
0.961
0.958
0.958
0.958
0.958
0.958
0.954
0.953
0.950
0.949
0.947
0.947
0.946
0.945
0.942
0.941
(Z
0
= 50Ω)
S22
ANG
–0.7
–1.6
–2.4
–3.2
–4.2
–4.9
–5.8
–6.7
–7.3
–8.3
–9.0
–9.6
–10.5
–11.2
–12.1
–12.9
–13.9
–14.5
–15.3
–15.9
Noise Figure Characteristics (V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
NFmin
(dB)
0.72
0.75
0.81
0.84
0.90
0.94
0.98
1.02
1.07
1.13
1.17
1.22
1.26
1.31
1.38
1.42
1.48
1.52
1.57
Gamma Optimum
ANG
0.97
0.95
0.93
0.91
0.88
0.86
0.84
0.83
0.81
0.80
0.79
0.78
0.78
0.77
0.77
0.77
0.76
0.76
0.75
MAG
4.4
6.4
8.2
9.9
11.4
12.8
14.2
15.5
16.7
17.9
19.1
20.3
21.5
22.8
24.2
25.6
27.1
28.8
30.6
Rn
(Ω)
63.7
63.0
62.2
61.5
60.7
59.9
59.1
58.4
57.6
56.8
56.0
55.2
54.3
53.5
52.7
51.9
51.0
50.2
49.3
–4–
3SK165A
Package Outline
Unit: mm
M-254
2.9 ± 0.2
1.9
( 0.95 )
( 0.95 )
+ 0.2
1.1 – 0.1
3
2
0.6
+ 0.2
1.6 – 0.1
2.8 ± 0.2
0 to 0.1
4
+ 0.1
0.4 – 0.05
( 0.95 )
1.8
1
+ 0.1
0.6 – 0.05
( 0.85 )
+ 0.1
0.10 – 0.01
1. Source
2. Gate1
3. Gate2
4. Drain
SONY CODE
EIAJ CODE
JEDEC CODE
M-254
PACKAGE MASS
0.01g
–5–
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