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HN58X2532IAG

Description
Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
File Size236KB,22 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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HN58X2532IAG Overview

Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory

HN58X2532IAG
HN58X2564IAG
Serial Peripheral Interface
32k EEPROM (4-kword
×
8-bit)
64k EEPROM (8-kword
×
8-bit)
Electrically Erasable and Programmable Read Only Memory
REJ03C0306-0100
Rev.1.00
Nov.16.2006
Description
HN58X25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and
Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing
advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 32-byte
page programming function to make it’s write operation faster.
Features
Single supply: 1.8 V to 5.5 V
Serial Peripheral Interface compatible (SPI bus)
SPI mode 0 (0,0), 3 (1,1)
Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
Power dissipation:
Standby: 3
µA
(max)
Active (Read): 3.0 mA (max)
Active (Write): 3.5 mA (max)
Automatic page write: 32-byte/page
Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min)
Endurance: 10
6
Erase/Write Cycles
Data retention: 10 Years
Small size packages: SOP-8pin, TSSOP-8pin
Shipping tape and reel
TSSOP-8pin : 3,000 IC/reel
SOP-8pin
: 2,500 IC/reel
Temperature range:
−40
to
+85°C
Lead free product.
Rev.1.00, Nov.16.2006, page 1 of 20

HN58X2532IAG Related Products

HN58X2532IAG HN58X2532FPIAG HN58X2564FPIAG HN58X2532TIAG HN58X2564TIAG
Description Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
Maker - Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code - SOIC SOIC SOIC SOIC
package instruction - SOP, SOP, TSSOP, TSSOP,
Contacts - 8 8 8 8
Reach Compliance Code - unknown unknow unknow unknow
ECCN code - EAR99 EAR99 EAR99 EAR99
Maximum clock frequency (fCLK) - 3 MHz 3 MHz 3 MHz 3 MHz
JESD-30 code - R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
length - 4.89 mm 4.89 mm 4.4 mm 4.4 mm
memory density - 32768 bit 65536 bi 32768 bi 65536 bi
Memory IC Type - EEPROM EEPROM EEPROM EEPROM
memory width - 8 8 8 8
Number of functions - 1 1 1 1
Number of terminals - 8 8 8 8
word count - 4096 words 8192 words 4096 words 8192 words
character code - 4000 8000 4000 8000
Operating mode - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature - 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature - -40 °C -40 °C -40 °C -40 °C
organize - 4KX8 8KX8 4KX8 8KX8
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - SOP SOP TSSOP TSSOP
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial - SERIAL SERIAL SERIAL SERIAL
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height - 1.73 mm 1.73 mm 1.1 mm 1.1 mm
Serial bus type - SPI SPI SPI SPI
Maximum supply voltage (Vsup) - 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) - 1.8 V 1.8 V 1.8 V 1.8 V
Nominal supply voltage (Vsup) - 2.5 V 2.5 V 2.5 V 2.5 V
surface mount - YES YES YES YES
technology - CMOS CMOS CMOS CMOS
Temperature level - INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form - GULL WING GULL WING GULL WING GULL WING
Terminal pitch - 1.27 mm 1.27 mm 0.65 mm 0.65 mm
Terminal location - DUAL DUAL DUAL DUAL
width - 3.9 mm 3.9 mm 3 mm 3 mm
Maximum write cycle time (tWC) - 8 ms 8 ms 8 ms 8 ms
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