SS9013
NPN EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION.
•
High total power dissipation. (P
T
=625mW)
•
High Collector Current. (I
C
=500mA)
•
Complementary to SS9012
•
Excellent h
FE
linearity.
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
40
20
5
500
625
150
-55 ~ 150
Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
Test Conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=500mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=10mA
Min
40
20
5
100
100
202
0.6
1.2
0.7
Typ
Max
Unit
V
V
V
nA
nA
64
40
0.6
120
120
0.16
0.91
0.67
V
V
V
h
FE
CLASSIFICATION
Classification
h
FE
(1)
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
Rev. B
©1999
Fairchild Semiconductor Corporation
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Definition of Terms
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Formative or
In Design
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This datasheet contains the design specifications for
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