SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SB1086A
·Wide area of safe operation
·High breakdown voltage :BV
CEO
=160V(min)
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2SD1563A
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
1.2
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
160
160
5
1.5
3.0
10
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SD1563A
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
Collector-emitter breakdown voltage
I
C
=1mA ;I
B
=0
I
E
=50µA ;I
C
=0
I
C
=50µA ;I
E
=0
I
C
=1.0A ;I
B
=0.1A
I
C
=1.0A ;I
B
=0.1A
V
CB
=120V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=0.1A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
160
V
Emitter-base breakdown voltage
5
V
Collector-base breakdown voltage
160
V
Collector-emitter saturation voltage
2.0
V
Base-emitter saturation voltage
1.5
V
Collector cut-off current
1.0
µA
Emitter cut-off current
1.0
µA
DC current gain
56
270
Transition frequency
80
MHz
Output capacitance
20
pF
h
FE
Classifications
N
56-120
P
82-180
Q
120-270
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1563A
Fig.2 Outline dimensions
3
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