MAT02AH datasheet, PDF - EEWORLD Datasheet

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MAT02AH: DescriptionSmall Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,; CategoryDiscrete semiconductor The transistor; File Size545KB，12 Pages; ManufacturerPrecision Monolithics Inc

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MAT02AH Overview

Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,

MAT02AH Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Other features	LOW NOISE
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	500
JEDEC-95 code	TO-78
JESD-30 code	O-MBCY-W6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
Guideline	MIL
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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	MAT02AH	MAT02EH	MAT02AH/883	MAT02BIFH	MAT02BRC/883	MAT-02N	MAT02FH	MAT02BIEH
Description	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V	40 V	40 V	40 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	500	500	500	400	400	400	400	500
JESD-30 code	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	S-PQCC-N20	R-XUUC-N7	O-MBCY-W6	O-MBCY-W6
Number of components	2	2	2	2	2	2	2	2
Number of terminals	6	6	6	6	20	7	6	6
Package body material	METAL	METAL	METAL	METAL	PLASTIC/EPOXY	UNSPECIFIED	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	SQUARE	RECTANGULAR	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CHIP CARRIER	UNCASED CHIP	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	YES	YES	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	NO LEAD	NO LEAD	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	QUAD	UPPER	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
JEDEC-95 code	TO-78	TO-78	TO-78	TO-78	-	-	TO-78	TO-78
Base Number Matches	1	1	1	1	1	-	-	-

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