MAT-02N datasheet, PDF - EEWORLD Datasheet

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MAT-02N: DescriptionSmall Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon,; CategoryDiscrete semiconductor The transistor; File Size545KB，12 Pages; ManufacturerPrecision Monolithics Inc

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MAT-02N Overview

Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon,

MAT-02N Parametric

Parameter Name	Attribute value
Maker	Precision Monolithics Inc
Reach Compliance Code	unknown
Other features	LOW NOISE
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	400
JESD-30 code	R-XUUC-N7
Number of components	2
Number of terminals	7
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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MAT-02N Related Products

	MAT-02N	MAT02EH	MAT02AH	MAT02AH/883	MAT02BIFH	MAT02BRC/883	MAT02FH	MAT02BIEH
Description	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V	40 V	40 V	40 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	400	500	500	500	400	400	400	500
JESD-30 code	R-XUUC-N7	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	S-PQCC-N20	O-MBCY-W6	O-MBCY-W6
Number of components	2	2	2	2	2	2	2	2
Number of terminals	7	6	6	6	6	20	6	6
Package body material	UNSPECIFIED	METAL	METAL	METAL	METAL	PLASTIC/EPOXY	METAL	METAL
Package shape	RECTANGULAR	ROUND	ROUND	ROUND	ROUND	SQUARE	ROUND	ROUND
Package form	UNCASED CHIP	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CHIP CARRIER	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	NO	NO	YES	NO	NO
Terminal form	NO LEAD	WIRE	WIRE	WIRE	WIRE	NO LEAD	WIRE	WIRE
Terminal location	UPPER	BOTTOM	BOTTOM	BOTTOM	BOTTOM	QUAD	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
JEDEC-95 code	-	TO-78	TO-78	TO-78	TO-78	-	TO-78	TO-78
Base Number Matches	-	1	1	1	1	1	-	-

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