MAT02AH/883 datasheet, PDF - EEWORLD Datasheet

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MAT02AH/883: DescriptionSmall Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,; CategoryDiscrete semiconductor The transistor; File Size545KB，12 Pages; ManufacturerPrecision Monolithics Inc

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MAT02AH/883 Overview

Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,

MAT02AH/883 Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
Other features	LOW NOISE
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	500
JEDEC-95 code	TO-78
JESD-30 code	O-MBCY-W6
Number of components	2
Number of terminals	6
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
Guideline	MIL
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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MAT02AH/883 Related Products

	MAT02AH/883	MAT02EH	MAT02AH	MAT02BIFH	MAT02BRC/883	MAT-02N	MAT02FH	MAT02BIEH
Description	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,	Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V	40 V	40 V	40 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	500	500	500	400	400	400	400	500
JESD-30 code	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	S-PQCC-N20	R-XUUC-N7	O-MBCY-W6	O-MBCY-W6
Number of components	2	2	2	2	2	2	2	2
Number of terminals	6	6	6	6	20	7	6	6
Package body material	METAL	METAL	METAL	METAL	PLASTIC/EPOXY	UNSPECIFIED	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	SQUARE	RECTANGULAR	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CHIP CARRIER	UNCASED CHIP	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	YES	YES	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	NO LEAD	NO LEAD	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	QUAD	UPPER	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
JEDEC-95 code	TO-78	TO-78	TO-78	TO-78	-	-	TO-78	TO-78
Base Number Matches	1	1	1	1	1	-	-	-

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