ZY1, ZY3.6 thru ZY200
Vishay Semiconductors
formerly General Semiconductor
Zener Diodes
V
Z
Range
1.0, 3.6 to 200V
Power Dissipation
2.0W
DO-204AM
1.0 (25.4)
MIN.
0.110 (2.79)
0.050 (1.27)
DIA.
ded ge
ten Ran
Ex e
tag
Vol
Features
• Silicon Power Zener Diodes.
• For use in stabilizing and clipping circuits with high
power rating.
• The Zener voltages are graded according to the
international E 24 standard. Smaller voltage
tolerances are available upon request.
0.205 (5.20)
0.125 (3.18)
Mechanical Data
1.0 (25.4)
MIN.
0.036 (0.91)
0.025 (0.64)
DIA.
Case:
JEDEC DO-204AM molded plastic body
Weight:
approx. 0.34g
Packaging Codes/Options:
E2/4K per Ammo mag. (52mm tape), 20K/box
E3/5K per 13” reel (52mm tape), 10K/box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
Parameter
Zener Current (see Table “Characteristics”)
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
P
tot
R
ΘJA
T
j
T
S
Symbol
(T
A
= 25°C unless otherwise noted)
Value
2.0
(1)
60
(1)
150
–55 to +150
Unit
W
°C/W
°C
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 10mm from case .
Document Number 88418
02-May-02
www.vishay.com
1
ZY1, ZY3.6 thru ZY200
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Zener
voltage
(2)
at
I
ZT
V
Z
(V)
0.71 … 0.82
3.4 ... 3.8
3.7 ... 4.1
4.0 ... 4.6
4.4 ... 5.0
4.8 ... 5.4
5.2 ... 6.0
5.8 ... 6.6
6.4 ... 7.2
7.0 ... 7.9
7.7 ... 8.7
8.5 ... 9.6
9.4 ... 10.6
10.4 … 11.6
11.4 … 12.7
12.4 … 14.1
13.8 … 15.8
15.3 … 17.1
16.8 … 19.1
18.8 … 21.2
20.8 … 23.3
22.8 … 25.6
25.1 … 28.9
28 … 32
31 … 35
34 … 38
37 … 41
40 … 46
44 … 50
48 … 54
52 … 60
58 … 66
64 … 72
70 … 79
77 … 88
85 … 96
94 … 106
104 …116
114 … 127
124 … 141
138 … 156
153 …171
168 … 191
188 … 212
(T
J
= 25°C unless otherwise noted)
Type
ZY1
(3)
ZY3.6
ZY3.9
ZY4.3
ZY4.7
ZY5.1
ZY5.6
ZY6.2
ZY6.8
ZY7.5
ZY8.2
ZY9.1
ZY10
ZY11
ZY12
ZY13
ZY15
ZY16
ZY18
ZY20
ZY22
ZY24
ZY27
ZY30
ZY33
ZY36
ZY39
ZY43
ZY47
ZY51
ZY56
ZY62
ZY68
ZY75
ZY82
ZY91
ZY100
ZY110
ZY120
ZY130
ZY150
ZY160
ZY180
ZY200
Dynamic
resistance
at I
ZT
f = 1 kHz
max r
zj
(Ω)
1
7
7
7
7
5
2
2
2
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
350
350
Temp. coeff.
of Zener volt.
at
I
ZT
α
VZ
(10
–4
/ K)
–26 … –16
–7 ... +2
–7 ... +2
–7 ... +3
–7 ... +4
–6 ... +5
–3 ... +5
–1 ... +6
0 ... +7
0 ... +7
+3 ... +8
+3 ... +8
+5 ... +9
+5 … +10
+5 … +10
+5 … +10
+5 … +10
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+7 … +12
+7 … +12
+7 … +12
+7 … +12
+8 … +13
+8 … +13
+8 … +13
+8 … +13
+9 … +13
+9 … +13
+9 … +13
+9 … +13
+9 … +13
+9 … +13
+9 … +13
+9 … +13
+9 … +13
Test
current
I
ZT
(mA)
100
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
Reverse
voltage
at
I
R
= 1µA
V
R
(V)
–
–
–
–
–
–
> 1.5
> 1.5
>2
>2
> 3.5
> 7.4
> 8.2
> 9.2
> 10
> 10.7
> 12
> 13.3
> 14.7
> 16.5
> 18.3
> 20.1
> 22.5
> 25.1
> 27.8
> 30.2
> 32.9
> 35.6
> 39.2
> 42.8
> 47.3
> 51.7
> 57.1
> 63.2
> 68.6
> 75.7
> 83.7
> 92.6
> 101.6
> 110.5
> 123
>136
> 149
> 167
Admissible
Zener current
(1)
at T
amb
= 25°C
I
Z
(mA)
1000
440
410
360
330
300
275
245
220
200
180
165
145
135
120
110
98
90
80
72
66
60
53
48
44
40
37
33
30
27
25
21
20
18
16
15
13
12
11
10
9
8.5
8
7.5
Notes:
(1) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
(2) Tested with pulses t
p
= 5 ms
(3) The ZY1 is a silicon diode operated in forward direction. Hence, the index of all parameters ratings should be “F” instead of “Z”. Connect the cathode
lead to the negative pole
www.vishay.com
2
Document Number 88418
02-May-02
MEMS sensors
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