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Datasheet> All Categories > Discrete semiconductor> The transistor> JANHCA2N6764
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JANHCA2N6764

Description
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
CategoryDiscrete semiconductor    The transistor   
File Size469KB，27 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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JANHCA2N6764 Overview

Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

JANHCA2N6764 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionDIE-3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)150 mJ
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)38 A
Maximum drain current (ID)38 A
Maximum drain-source on-resistance0.055 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-XUUC-N3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)152 A
Certification statusQualified
GuidelineMIL-19500/543G
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 29 April 2013.
INCH-POUND
MIL-PRF-19500/543N
29 March 2013
SUPERSEDING
MIL-PRF-19500/543M
22 September 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON
REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1,
2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode,
MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as
specified in
MIL-PRF-19500
and two levels of product assurance for each unencapsulated die, with avalanche energy
ratings (EAS and EAR) and maximum avalanche current (IAR).
1.2 Physical dimensions. See
figure 1
(TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768
and 2N6770 (formerly TO-3)), see
figure 2
(TO-254AA for types 2N6764T1, 2N6766T1; 2N6768T1, and 2N6770T1),
and
figures 3, 4,
and
5
for JANHC and JANKC (die) dimensions.
1.3 Maximum ratings.
(T
A
= +25°C, unless otherwise specified).
PT
TA = +25°C
W
4
4
4
4
R
θJC
(2)
°C/W
0.83
0.83
0.83
0.83
VDS
V dc
100
200
400
500
VDG
V dc
100
200
400
500
VGS
V dc
±20
±20
±20
±20
ID1 (3) (4)
TC = +25°C
A dc
38.0
30.0
14.0
12.0
IS
A dc
38.0
30.0
14.0
12.0
ID2 (3) (4)
TC = +100°C
A dc
24.0
19.0
9.0
7.75
Type
PT (1)
TC = +25°C
W
150
150
150
150
2N6764, 2N6764T1
2N6766, 2N6766T1
2N6768, 2N6768T1
2N6770, 2N6770T1
See notes on next page.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil/.
AMSC N/A
FSC 5961

JANHCA2N6764 Related Products

JANHCA2N6764 JANTXV2N6768 JANTX2N6768 JANHCA2N6768 JANHCA2N6766 JANTXV2N6764 JANHCA2N6770 JANTX2N6764 JANTXV2N6766
Description Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction DIE-3 TO-204, 2 PIN TO-204, 2 PIN DIE-3 DIE-3 TO-204, 2 PIN DIE-3 TO-204, 2 PIN HERMETIC SEALED, TO-204, 2 PIN
Reach Compliance Code compliant compli compli compli unknown unknown unknown unknown unknown
Avalanche Energy Efficiency Rating (Eas) 150 mJ 11.3 mJ 11.3 mJ 700 mJ 500 mJ 150 mJ 750 mJ 150 mJ 60 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE SINGLE SINGLE WITH BUILT-IN DIODE SINGLE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 400 V 400 V 400 V 200 V 100 V 500 V 100 V 200 V
Maximum drain current (Abs) (ID) 38 A 14 A 14 A 14 A 30 A 38 A 12 A 38 A 30 A
Maximum drain current (ID) 38 A 14 A 14 A 14 A 30 A 38 A 12 A 38 A 30 A
Maximum drain-source on-resistance 0.055 Ω 0.4 Ω 0.4 Ω 0.3 Ω 0.085 Ω 0.065 Ω 0.4 Ω 0.065 Ω 0.09 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code S-XUUC-N3 O-MBFM-P2 O-MBFM-P2 S-XUUC-N3 S-XUUC-N3 O-MBFM-P2 S-XUUC-N3 O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 2 2 3 3 2 3 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material UNSPECIFIED METAL METAL UNSPECIFIED UNSPECIFIED METAL UNSPECIFIED METAL METAL
Package shape SQUARE ROUND ROUND SQUARE SQUARE ROUND SQUARE ROUND ROUND
Package form UNCASED CHIP FLANGE MOUNT FLANGE MOUNT UNCASED CHIP UNCASED CHIP FLANGE MOUNT UNCASED CHIP FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 150 W 150 W 150 W 150 W 150 W 150 W 150 W 150 W 150 W
Maximum pulsed drain current (IDM) 152 A 56 A 56 A 56 A 120 A 152 A 48 A 152 A 120 A
Certification status Qualified Qualified Qualified Qualified Qualified Qualified Qualified Qualified Qualified
Guideline MIL-19500/543G MIL-19500/543 MIL-19500/543 MIL-19500/543G MIL-19500/543G MIL-19500/543 MIL-19500/543G MIL-19500/543 MIL-19500/543
surface mount YES NO NO YES YES NO YES NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form NO LEAD PIN/PEG PIN/PEG NO LEAD NO LEAD PIN/PEG NO LEAD PIN/PEG PIN/PEG
Terminal location UPPER BOTTOM BOTTOM UPPER UPPER BOTTOM UPPER BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker Infineon - - - Infineon Infineon Infineon Infineon Infineon
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 - EAR99 EAR99
Other features - HIGH RELIABILITY HIGH RELIABILITY - - HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY
JEDEC-95 code - TO-204 TO-204 - - TO-204 - TO-204 TO-204

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