JANHCA2N6770 datasheet, PDF - EEWORLD Datasheet

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JANHCA2N6770: DescriptionPower Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3; CategoryDiscrete semiconductor The transistor; File Size469KB，27 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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JANHCA2N6770 Overview

Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

JANHCA2N6770 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	DIE-3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	750 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-XUUC-N3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	150 W
Maximum pulsed drain current (IDM)	48 A
Certification status	Qualified
Guideline	MIL-19500/543G
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 29 April 2013.

INCH-POUND

MIL-PRF-19500/543N

29 March 2013

SUPERSEDING

MIL-PRF-19500/543M

22 September 2011

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON

REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1,

2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and

MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode,

MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as

specified in

MIL-PRF-19500

and two levels of product assurance for each unencapsulated die, with avalanche energy

ratings (EAS and EAR) and maximum avalanche current (IAR).

1.2 Physical dimensions. See

figure 1

(TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768

and 2N6770 (formerly TO-3)), see

figure 2

(TO-254AA for types 2N6764T1, 2N6766T1; 2N6768T1, and 2N6770T1),

and

figures 3, 4,

and

for JANHC and JANKC (die) dimensions.

1.3 Maximum ratings.

= +25°C, unless otherwise specified).

TA = +25°C

θJC

(2)

°C/W

0.83

VDS

V dc

100

200

400

500

VDG

V dc

100

200

400

500

VGS

V dc

±20

ID1 (3) (4)

TC = +25°C

A dc

38.0

30.0

14.0

12.0

A dc

38.0

30.0

14.0

12.0

ID2 (3) (4)

TC = +100°C

A dc

24.0

19.0

9.0

7.75

Type

PT (1)

TC = +25°C

150

2N6764, 2N6764T1

2N6766, 2N6766T1

2N6768, 2N6768T1

2N6770, 2N6770T1

See notes on next page.

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dla.mil.

Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online database at

https://assist.dla.mil/.

AMSC N/A

FSC 5961

JANHCA2N6770 Related Products

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Description	Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN	Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	DIE-3	TO-204, 2 PIN	TO-204, 2 PIN	DIE-3	DIE-3	DIE-3	TO-204, 2 PIN	TO-204, 2 PIN	HERMETIC SEALED, TO-204, 2 PIN
Reach Compliance Code	unknown	compli	compli	compli	compliant	unknown	unknown	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	750 mJ	11.3 mJ	11.3 mJ	700 mJ	150 mJ	500 mJ	150 mJ	150 mJ	60 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	400 V	400 V	400 V	100 V	200 V	100 V	100 V	200 V
Maximum drain current (Abs) (ID)	12 A	14 A	14 A	14 A	38 A	30 A	38 A	38 A	30 A
Maximum drain current (ID)	12 A	14 A	14 A	14 A	38 A	30 A	38 A	38 A	30 A
Maximum drain-source on-resistance	0.4 Ω	0.4 Ω	0.4 Ω	0.3 Ω	0.055 Ω	0.085 Ω	0.065 Ω	0.065 Ω	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-XUUC-N3	O-MBFM-P2	O-MBFM-P2	S-XUUC-N3	S-XUUC-N3	S-XUUC-N3	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	2	2	3	3	3	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	METAL	METAL	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	METAL	METAL	METAL
Package shape	SQUARE	ROUND	ROUND	SQUARE	SQUARE	SQUARE	ROUND	ROUND	ROUND
Package form	UNCASED CHIP	FLANGE MOUNT	FLANGE MOUNT	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	150 W	150 W	150 W	150 W	150 W	150 W	150 W	150 W	150 W
Maximum pulsed drain current (IDM)	48 A	56 A	56 A	56 A	152 A	120 A	152 A	152 A	120 A
Certification status	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified
Guideline	MIL-19500/543G	MIL-19500/543	MIL-19500/543	MIL-19500/543G	MIL-19500/543G	MIL-19500/543G	MIL-19500/543	MIL-19500/543	MIL-19500/543
surface mount	YES	NO	NO	YES	YES	YES	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD	PIN/PEG	PIN/PEG	NO LEAD	NO LEAD	NO LEAD	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	UPPER	BOTTOM	BOTTOM	UPPER	UPPER	UPPER	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Infineon	-	-	-	Infineon	Infineon	Infineon	Infineon	Infineon
ECCN code	-	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	-	HIGH RELIABILITY	HIGH RELIABILITY	-	-	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
JEDEC-95 code	-	TO-204	TO-204	-	-	-	TO-204	TO-204	TO-204

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