HB54A5128FN-B75B datasheet, PDF

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HB54A5128FN-B75B: Description512MB Unbuffered DDR SDRAM DIMM; Categorystorage storage; File Size181KB，17 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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HB54A5128FN-B75B Overview

512MB Unbuffered DDR SDRAM DIMM

HB54A5128FN-B75B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ELPIDA
Parts packaging code	DIMM
package instruction	DIMM, DIMM184
Contacts	184
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	4294967296 bi
Memory IC Type	DDR DRAM MODULE
memory width	64
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	184
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	55 °C
Minimum operating temperature
organize	64MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum slew rate	2.08 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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DATA SHEET

512MB Unbuffered DDR SDRAM DIMM

HB54A5128FN-A75B/B75B/10B

(64M words

64 bits, 2 Banks)

HB54A5129FN-A75B/B75B/10B

(64M words

72 bits, 2 Banks)

Description

The HB54A5128FN, HB54A5129FN are Double Data

Rate (DDR) SDRAM Module, mounted 256M bits DDR

SDRAM (HM5425801BTT) sealed in TSOP package,

and 1 piece of serial EEPROM (2k bits EEPROM) for

Presence Detect (PD).

The HB54A5128FN is

organized as 32M

2 banks mounted 16 pieces

of 256M bits DDR SDRAM. The HB54A5129FN is

organized as 32M

2 banks mounted 18 pieces

of 256M bits DDR SDRAM. Read and write operations

are performed at the cross points of the CK and the

/CK. This high-speed data transfer is realized by the 2

bits prefetch-pipelined architecture. Data strobe (DQS)

both for read and write are available for high speed and

reliable data bus design. By setting extended mode

set enable or disable. An outline of the products is

184-pin socket type package (dual lead out).

Therefore, it makes high density mounting possible

without surface mount technology. It provides common

data inputs and outputs. Decoupling capacitors are

mounted beside each TSOP on the module board.

Features

•

184-pin socket type package (dual lead out)



Outline: 133.35mm (Length)

31.75mm (Height)

4.00mm (Thickness)



Lead pitch: 1.27mm

•

2.5V power supply (VCC/VCCQ)

•

SSTL-2 interface for all inputs and outputs

•

Clock frequency: 143MHz/133MHz/125MHz (max.)

•

Data inputs, outputs and DM are synchronized with

DQS

•

4 banks can operate simultaneously and

independently (Component)

•

Burst read/write operation

•

Programmable burst length: 2, 4, 8



Burst read stop capability

•

Programmable burst sequence



Sequential



Interleave

•

Start addressing capability



Even and Odd

•

Programmable /CAS latency (CL): 2, 2.5

•

8192 refresh cycles: 7.8µs (8192/64ms)

•

2 variations of refresh



Auto refresh



Self refresh

Document No. E0087H40 (Ver. 4.0)

Date Published August 2002 (K) Japan

URL: http://www.elpida.com

Elpida

Memory, Inc. 2001-2002

Hitachi,

Ltd. 2000

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

HB54A5128FN-B75B Related Products

	HB54A5128FN-B75B	HB54A5129FN-B75B	HB54A5129FN-10B	HB54A5128FN-A75B	HB54A5128FN-10B
Description	512MB Unbuffered DDR SDRAM DIMM	512MB Unbuffered DDR SDRAM DIMM	512MB Unbuffered DDR SDRAM DIMM	512MB Unbuffered DDR SDRAM DIMM	512MB Unbuffered DDR SDRAM DIMM
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	ELPIDA	ELPIDA	ELPIDA	ELPIDA	ELPIDA
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184
Contacts	184	184	184	184	184
Reach Compliance Code	unknow	unknown	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.75 ns	0.75 ns	0.8 ns	0.75 ns	0.8 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	133 MHz	125 MHz	143 MHz	125 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
memory density	4294967296 bi	4831838208 bit	4831838208 bi	4294967296 bi	4294967296 bi
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	72	72	64	64
Humidity sensitivity level	1	1	1	1	1
Number of functions	1	1	1	1	1
Number of ports	1	1	1	1	1
Number of terminals	184	184	184	184	184
word count	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words
character code	64000000	64000000	64000000	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	55 °C	55 °C	55 °C	55 °C	55 °C
organize	64MX64	64MX72	64MX72	64MX64	64MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225	225	225	225	225
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192
self refresh	YES	YES	YES	YES	YES
Maximum slew rate	2.08 mA	2.34 mA	2.205 mA	2.2 mA	1.96 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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