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LV2205

Description
Silicon Tuning Diodes
CategoryDiscrete semiconductor    diode   
File Size73KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

LV2205 Overview

Silicon Tuning Diodes

LV2205 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionPLASTIC, CASE 182-06, TO-226AC, 2 PIN
Contacts3
Manufacturer packaging codeCASE 182-06
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio2.5
Nominal diode capacitance15 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.28 W
Certification statusNot Qualified
minimum quality factor400
Maximum repetitive peak reverse voltage30 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2205, LV2209
Silicon Tuning Diodes
6.8–100 pF, 30 Volts
Voltage Variable Capacitance Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid–state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
http://onsemi.com
3
Cathode
SOT–23
1
Anode
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance – 10%
Complete Typical Design Curves
2
Cathode
TO–92
1
Anode
MARKING
DIAGRAM
3
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Forward Power Dissipation
@ TA = 25°C
MMBV21xx
Derate above 25°C
@ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
MV21xx
LV22xx
TJ
Tstg
Symbol
VR
IF
PD
225
1.8
280
2.8
+150
–55 to +150
°C
°C
1
Value
30
200
Unit
Vdc
mAdc
mW
mW/°C
1
2
XXX M
TO–236AB, SOT–23
CASE 318–08
STYLE 8
XXX
= Device Code*
M
= Date Code
* See Table
XX
XXXX
YWW
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2103LT1 = 4H
MMBV2105LT1 = 4U
MMBV2107LT1 = 4W
MMBV2108LT1 = 4X
MMBV2109LT1 = 4J
MV2101 = MV2101
MV2105 = MV2105
MV2109 = MV2109
LV2205 = LV2205
LV2209 = LV2209
2
TO–226AC, TO–92
CASE 182
STYLE 1
XX
= Device Code Line 1*
XXXX = Device Code Line 2*
M
= Date Code
* See Table
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10
µAdc)
MMBV21xx, MV21xx
LV22xx
Reverse Voltage Leakage
Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance
Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
Symbol
V(BR)R
30
25
IR
0.1
µAdc
Min
Typ
Max
Unit
Vdc
Preferred
devices are recommended choices for future use
and best overall value.
TCC
280
ppm/°C
©
Semiconductor Components Industries, LLC, 2001
1
October, 2001 – Rev. 3
Publication Order Number:
MMBV2101LT1/D
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