Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 20 A |
| Collector-based maximum capacity | 400 pF |
| Collector-emitter maximum voltage | 80 V |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Minimum DC current gain (hFE) | 100 |
| JEDEC-95 code | TO-218 |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 160 W |
| Maximum power dissipation(Abs) | 160 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 4 MHz |
| VCEsat-Max | 3 V |
| Base Number Matches | 1 |
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