CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETERS
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250µA (Figure 9)
V
DS
= 50V, V
GS
= 0V
V
DS
= 45V, V
GS
= 0V, T
C
= 150
o
C
MIN
55
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V,
I
D
≅
70A,
R
L
= 0.428Ω
I
g(REF)
= 1.0mA
(Figures 13,16,17)
-
-
-
-
-
-
(Figure 3)
TO-247
TO-220, TO-262, and TO-263
-
-
-
TYP
-
-
-
-
-
-
-
15
60
20
25
-
110
60
3.7
2000
700
160
-
-
-
MAX
-
4
1
250
100
0.012
110
-
-
-
-
70
130
75
4.5
-
-
-
1.21
30
62
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
V
GS
=
±20V
I
D
= 70A, V
GS
= 10V (Figure 8)
V
DD
= 30V, I
D
≅
70A,
R
L
= 0.428Ω, V
GS
=
10V,
R
GS
= 5.1Ω
(Figures 18, 19)
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 11)
Source to Drain Diode Specifications
PARAMETERS
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
I
SD
= 70A
I
SD
= 70A, dI
SD
/dt = 100A/µs
I
SD
= 70A, dI
SD
/dt = 100A/µs
MIN
-
-
-
TYP
-
-
-
MAX
1.25
85
160
UNITS
V
ns
nC
2
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
60
0.8
0.6
0.4
0.2
0
0
25
80
40
20
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
0.01
10
-5
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
T
J
= MAX RATED
T
C
= 25
o
C
I
DM
, PEAK CURRENT (A)
1000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
I
D
, DRAIN CURRENT (A)
100
100µs
1ms
10
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
V
GS
= 10V
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
V
DSS
MAX = 55V
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
3
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S
Typical Performance Curves
150
(Continued)
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
120
V
GS
= 20V
V
GS
= 10V
V
GS
= 7V
V
GS
= 6V
150
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
120
175
o
C
90
90
60
60
V
GS
= 5V
30
PULSE DURATION = 250µs
T
C
= 25
o
C
0
0
1
2
3
4
30
25
o
C
-55
o
C
0
1.5
3.0
4.5
6.0
7.5
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 250µs, V
GS
= 10V, I
D
= 70A
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
V
GS
= V
DS
, I
D
= 250µA
2.0
1.0
1.5
0.8
1.0
0.6
0.5
-80
-40
0
40
80
120
160
o
C)
T
J
, JUNCTION TEMPERATURE (
200
0.4
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
3750
V
GS
= 0V, f = 1MHz
3000
C, CAPACITANCE (pF)
1.1
2250
C
ISS
1500
C
OSS
C
RSS
1.0
0.9
750
0.8
-80
-40
0
40
80
120
160
200
0
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
60
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4
HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S
Typical Performance Curves
500
I
AS
, AVALANCHE CURRENT (A)
(Continued)
V
GS
, GATE TO SOURCE VOLTAGE (V)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
10
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 70A
8
I
D
= 52.5A
I
D
= 35A
I
D
= 17.5A
6
100
STARTING T
J
= 25
o
C
4
STARTING T
J
= 150
o
C
2
V
DD
= 30V
0
0
10
20
30
40
Q
g
, GATE CHARGE (nC)
50
60
10
0.001
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
NOTE:
Refer to Harris Application Notes AN9321 and AN9322.
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
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51mcu
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