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24C01C_08

Description
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Categorystorage   
File Size416KB,30 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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24C01C_08 Overview

128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

24C01C_08 Parametric

Parameter NameAttribute value
maximum clock frequency0.4000 MHz
Number of functions1
Number of terminals8
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Rated supply voltage5 V
Minimum supply/operating voltage4.5 V
Maximum supply/operating voltage5.5 V
Processing package description3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
sub_categoryEEPROMs
data_retention_time_mi200
endurance1.00E6 Write/Erase Cycles
i2c_control_byte1010DDDR
jesd_30_codeR-PDSO-G8
jesd_609_codee3
storage density1024 bit
Memory IC typeEEPROM
memory width8
moisture_sensitivity_level1
Number of digits128 words
Number of digits128
operating modeSYNCHRONOUS
organize128X8
Packaging MaterialsPLASTIC/EPOXY
ckage_codeSOP
ckage_equivalence_codeSOP8,.25
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
serial parallelSERIAL
eak_reflow_temperature__cel_260
wer_supplies__v_5
qualification_statusCOMMERCIAL
seated_height_max1.75 mm
serial_bus_typeI2C
standby_current_max5.00E-5 Amp
Maximum supply voltage0.0030 Amp
surface mountYES
CraftsmanshipCMOS
Temperature levelINDUSTRIAL
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal spacing1.27 mm
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_40
Maximum TWC of write cycle1 ms
length4.9 mm
width3.9 mm
dditional_featureDATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED
24C01C
1K 5.0V I
2
C
Serial EEPROM
Features:
• Single Supply with Operation from 4.5V to 5.5V
• Low-Power CMOS Technology:
- Read current 1 mA, max.
- Standby current 5
μA,
max.
• 2-Wire Serial Interface, I
2
C™ Compatible
• Cascadable up to Eight Devices
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to Eliminate Ground Bounce
• 100 kHz and 400 kHz Clock Compatibility
• Page Write Time 1 ms max.
• Self-Timed Erase/Write Cycle
• 16-Byte Page Write Buffer
• ESD Protection >4000V
• More than 1 Million Erase/Write Cycles
• Data Retention >200 Years
• Factory Programming Available
• Packages include 8-lead PDIP, SOIC, TSSOP,
DFN, TDFN and MSOP
• Pb-Free and RoHS Compliant
• Temperature Ranges:
- Industrial (I):
-40°C to +85°C
- Automotive (E):
-40°C to +125°C
Description:
The Microchip Technology Inc. 24C01C is a 1K bit
Serial Electrically Erasable PROM with a voltage range
of 4.5V to 5.5V. The device is organized as a single
block of 128 x 8-bit memory with a 2-wire serial
interface. Low-current design permits operation with
max. standby and active currents of only 5
μA
and 1
mA, respectively. The device has a page write capabil-
ity for up to 16 bytes of data and has fast write cycle
times of only 1 ms for both byte and page writes. Func-
tional address lines allow the connection of up to eight
24C01C devices on the same bus for up to 8K bits of
contiguous EEPROM memory. The device is available
in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm),
8-pin 2x3 DFN and TDFN, 8-pin MSOP and TSSOP
packages.
Block Diagram
A0 A1 A2
HV Generator
Memory
Control
Logic
I/O
Control
Logic
XDEC
EEPROM
Array
SDA SCL
V
CC
V
SS
Sense Amp.
R/W Control
YDEC
Package Types
PDIP, MSOP
A0
A1
A2
V
SS
1
2
3
4
8
7
6
5
V
CC
Test
SCL
SDA
A0
A1
A2
V
SS
SOIC, TSSOP
1
2
3
4
8
7
6
5
V
CC
Test
SCL
SDA
DFN/TDFN
A0 1
A1 2
A2 3
V
SS
4
8 V
CC
7 Test
6 SCL
5 SDA
©
2008 Microchip Technology Inc.
DS21201J-page 1

24C01C_08 Related Products

24C01C_08 24C01C-I/MNY 24C01C-I/P 24C01C-E/ST 24C01C-E/SN 24C01C-E/MS 24C01C-E/MNY 24C01C
Description 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 8 8 8 8 8 8 8 8
Minimum operating temperature -40 Cel -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 Cel
Maximum operating temperature 85 Cel 85 °C 85 °C 125 °C 125 °C 125 °C 125 °C 85 Cel
memory width 8 8 8 8 8 8 8 8
organize 128X8 128X8 128X8 128X8 128X8 128X8 128X8 128X8
surface mount YES YES NO YES YES YES YES YES
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE INDUSTRIAL
Terminal form GULL WING NO LEAD THROUGH-HOLE GULL WING GULL WING GULL WING NO LEAD GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
length 4.9 mm 3 mm 9.27 mm 4.4 mm 4.9 mm 3 mm 3 mm 4.9 mm
width 3.9 mm 2 mm 7.62 mm 3 mm 3.9 mm 3 mm 2 mm 3.9 mm
Is it lead-free? - Lead free Lead free Lead free Lead free Lead free Lead free -
Is it Rohs certified? - conform to conform to conform to conform to conform to conform to -
Parts packaging code - DFN DIP SOIC SOIC MSOP DFN -
package instruction - 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8 DIP, DIP8,.3 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 ROHS COMPLIANT, PLASTIC, MSOP-8 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8 -
Contacts - 8 8 8 8 8 8 -
Reach Compliance Code - compli compli compli compli compli compli -
Maximum clock frequency (fCLK) - 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz -
Data retention time - minimum - 200 200 200 200 200 200 -
Durability - 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles -
I2C control byte - 1010DDDR 1010DDDR 1010DDDR 1010DDDR 1010DDDR 1010DDDR -
JESD-30 code - R-PDSO-N8 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8 S-PDSO-G8 R-PDSO-N8 -
JESD-609 code - e4 e3 e3 e3 e3 e4 -
memory density - 1024 bi 1024 bi 1024 bi 1024 bi 1024 bi 1024 bi -
Memory IC Type - EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM -
Humidity sensitivity level - 1 - 1 1 1 1 -
word count - 128 words 128 words 128 words 128 words 128 words 128 words -
character code - 128 128 128 128 128 128 -
Operating mode - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code - HVSON DIP TSSOP SOP TSSOP HVSON -
Encapsulate equivalent code - SOLCC8,.11,20 DIP8,.3 TSSOP8,.25 SOP8,.25 TSSOP8,.19 SOLCC8,.11,20 -
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR SQUARE RECTANGULAR -
Package form - SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE IN-LINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE -
Parallel/Serial - SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL -
Peak Reflow Temperature (Celsius) - 260 NOT SPECIFIED 260 260 260 260 -
power supply - 5 V 5 V 5 V 5 V 5 V 5 V -
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Maximum seat height - 0.8 mm 5.334 mm 1.2 mm 1.75 mm 1.1 mm 0.8 mm -
Serial bus type - I2C I2C I2C I2C I2C I2C -
Maximum standby current - 0.00005 A 0.00005 A 0.00005 A 0.00005 A 0.00005 A 0.00005 A -
Maximum slew rate - 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA -
Maximum supply voltage (Vsup) - 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V -
Minimum supply voltage (Vsup) - 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V -
Nominal supply voltage (Vsup) - 5 V 5 V 5 V 5 V 5 V 5 V -
technology - CMOS CMOS CMOS CMOS CMOS CMOS -
Terminal surface - NICKEL PALLADIUM GOLD Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) NICKEL PALLADIUM GOLD -
Terminal pitch - 0.5 mm 2.54 mm 0.65 mm 1.27 mm 0.65 mm 0.5 mm -
Maximum time at peak reflow temperature - 40 NOT SPECIFIED 40 40 40 40 -
Maximum write cycle time (tWC) - 1 ms 1 ms 1.5 ms 1.5 ms 1.5 ms 1.5 ms -
Base Number Matches - 1 1 1 1 1 1 -

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