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24C01C-I/MNY

Description
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Categorystorage    storage   
File Size416KB,30 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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24C01C-I/MNY Overview

128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

24C01C-I/MNY Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDFN
package instruction2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Maximum clock frequency (fCLK)0.4 MHz
Data retention time - minimum200
Durability1000000 Write/Erase Cycles
I2C control byte1010DDDR
JESD-30 codeR-PDSO-N8
JESD-609 codee4
length3 mm
memory density1024 bi
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count128 words
character code128
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128X8
Package body materialPLASTIC/EPOXY
encapsulated codeHVSON
Encapsulate equivalent codeSOLCC8,.11,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Maximum seat height0.8 mm
Serial bus typeI2C
Maximum standby current0.00005 A
Maximum slew rate0.003 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNICKEL PALLADIUM GOLD
Terminal formNO LEAD
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width2 mm
Maximum write cycle time (tWC)1 ms
Base Number Matches1
24C01C
1K 5.0V I
2
C
Serial EEPROM
Features:
• Single Supply with Operation from 4.5V to 5.5V
• Low-Power CMOS Technology:
- Read current 1 mA, max.
- Standby current 5
μA,
max.
• 2-Wire Serial Interface, I
2
C™ Compatible
• Cascadable up to Eight Devices
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to Eliminate Ground Bounce
• 100 kHz and 400 kHz Clock Compatibility
• Page Write Time 1 ms max.
• Self-Timed Erase/Write Cycle
• 16-Byte Page Write Buffer
• ESD Protection >4000V
• More than 1 Million Erase/Write Cycles
• Data Retention >200 Years
• Factory Programming Available
• Packages include 8-lead PDIP, SOIC, TSSOP,
DFN, TDFN and MSOP
• Pb-Free and RoHS Compliant
• Temperature Ranges:
- Industrial (I):
-40°C to +85°C
- Automotive (E):
-40°C to +125°C
Description:
The Microchip Technology Inc. 24C01C is a 1K bit
Serial Electrically Erasable PROM with a voltage range
of 4.5V to 5.5V. The device is organized as a single
block of 128 x 8-bit memory with a 2-wire serial
interface. Low-current design permits operation with
max. standby and active currents of only 5
μA
and 1
mA, respectively. The device has a page write capabil-
ity for up to 16 bytes of data and has fast write cycle
times of only 1 ms for both byte and page writes. Func-
tional address lines allow the connection of up to eight
24C01C devices on the same bus for up to 8K bits of
contiguous EEPROM memory. The device is available
in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm),
8-pin 2x3 DFN and TDFN, 8-pin MSOP and TSSOP
packages.
Block Diagram
A0 A1 A2
HV Generator
Memory
Control
Logic
I/O
Control
Logic
XDEC
EEPROM
Array
SDA SCL
V
CC
V
SS
Sense Amp.
R/W Control
YDEC
Package Types
PDIP, MSOP
A0
A1
A2
V
SS
1
2
3
4
8
7
6
5
V
CC
Test
SCL
SDA
A0
A1
A2
V
SS
SOIC, TSSOP
1
2
3
4
8
7
6
5
V
CC
Test
SCL
SDA
DFN/TDFN
A0 1
A1 2
A2 3
V
SS
4
8 V
CC
7 Test
6 SCL
5 SDA
©
2008 Microchip Technology Inc.
DS21201J-page 1

24C01C-I/MNY Related Products

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Description 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
length 3 mm 4.9 mm 9.27 mm 4.4 mm 4.9 mm 3 mm 3 mm 4.9 mm
memory width 8 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 8 8 8 8 8 8 8 8
Maximum operating temperature 85 °C 85 Cel 85 °C 125 °C 125 °C 125 °C 125 °C 85 Cel
Minimum operating temperature -40 °C -40 Cel -40 °C -40 °C -40 °C -40 °C -40 °C -40 Cel
organize 128X8 128X8 128X8 128X8 128X8 128X8 128X8 128X8
surface mount YES YES NO YES YES YES YES YES
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE INDUSTRIAL
Terminal form NO LEAD GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING NO LEAD GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
width 2 mm 3.9 mm 7.62 mm 3 mm 3.9 mm 3 mm 2 mm 3.9 mm
Is it lead-free? Lead free - Lead free Lead free Lead free Lead free Lead free -
Is it Rohs certified? conform to - conform to conform to conform to conform to conform to -
Parts packaging code DFN - DIP SOIC SOIC MSOP DFN -
package instruction 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8 - DIP, DIP8,.3 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 ROHS COMPLIANT, PLASTIC, MSOP-8 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8 -
Contacts 8 - 8 8 8 8 8 -
Reach Compliance Code compli - compli compli compli compli compli -
Maximum clock frequency (fCLK) 0.4 MHz - 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz -
Data retention time - minimum 200 - 200 200 200 200 200 -
Durability 1000000 Write/Erase Cycles - 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles -
I2C control byte 1010DDDR - 1010DDDR 1010DDDR 1010DDDR 1010DDDR 1010DDDR -
JESD-30 code R-PDSO-N8 - R-PDIP-T8 R-PDSO-G8 R-PDSO-G8 S-PDSO-G8 R-PDSO-N8 -
JESD-609 code e4 - e3 e3 e3 e3 e4 -
memory density 1024 bi - 1024 bi 1024 bi 1024 bi 1024 bi 1024 bi -
Memory IC Type EEPROM - EEPROM EEPROM EEPROM EEPROM EEPROM -
Humidity sensitivity level 1 - - 1 1 1 1 -
word count 128 words - 128 words 128 words 128 words 128 words 128 words -
character code 128 - 128 128 128 128 128 -
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code HVSON - DIP TSSOP SOP TSSOP HVSON -
Encapsulate equivalent code SOLCC8,.11,20 - DIP8,.3 TSSOP8,.25 SOP8,.25 TSSOP8,.19 SOLCC8,.11,20 -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR SQUARE RECTANGULAR -
Package form SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - IN-LINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE -
Parallel/Serial SERIAL - SERIAL SERIAL SERIAL SERIAL SERIAL -
Peak Reflow Temperature (Celsius) 260 - NOT SPECIFIED 260 260 260 260 -
power supply 5 V - 5 V 5 V 5 V 5 V 5 V -
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Maximum seat height 0.8 mm - 5.334 mm 1.2 mm 1.75 mm 1.1 mm 0.8 mm -
Serial bus type I2C - I2C I2C I2C I2C I2C -
Maximum standby current 0.00005 A - 0.00005 A 0.00005 A 0.00005 A 0.00005 A 0.00005 A -
Maximum slew rate 0.003 mA - 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA -
Maximum supply voltage (Vsup) 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V -
Minimum supply voltage (Vsup) 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V -
Nominal supply voltage (Vsup) 5 V - 5 V 5 V 5 V 5 V 5 V -
technology CMOS - CMOS CMOS CMOS CMOS CMOS -
Terminal surface NICKEL PALLADIUM GOLD - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) NICKEL PALLADIUM GOLD -
Terminal pitch 0.5 mm - 2.54 mm 0.65 mm 1.27 mm 0.65 mm 0.5 mm -
Maximum time at peak reflow temperature 40 - NOT SPECIFIED 40 40 40 40 -
Maximum write cycle time (tWC) 1 ms - 1 ms 1.5 ms 1.5 ms 1.5 ms 1.5 ms -
Base Number Matches 1 - 1 1 1 1 1 -
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