24C01C datasheet, PDF - EEWORLD Datasheet

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24C01C: Description128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8; Categorystorage; File Size416KB，30 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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24C01C Overview

128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

24C01C Parametric

Parameter Name	Attribute value
maximum clock frequency	0.4000 MHz
Number of functions	1
Number of terminals	8
Minimum operating temperature	-40 Cel
Maximum operating temperature	85 Cel
Rated supply voltage	5 V
Minimum supply/operating voltage	4.5 V
Maximum supply/operating voltage	5.5 V
Processing package description	3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8
each_compli	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	Active
sub_category	EEPROMs
data_retention_time_mi	200
endurance	1.00E6 Write/Erase Cycles
i2c_control_byte	1010DDDR
jesd_30_code	R-PDSO-G8
jesd_609_code	e3
storage density	1024 bit
Memory IC type	EEPROM
memory width	8
moisture_sensitivity_level	1
Number of digits	128 words
Number of digits	128
operating mode	SYNCHRONOUS
organize	128X8
Packaging Materials	PLASTIC/EPOXY
ckage_code	SOP
ckage_equivalence_code	SOP8,.25
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
serial parallel	SERIAL
eak_reflow_temperature__cel_	260
wer_supplies__v_	5
qualification_status	COMMERCIAL
seated_height_max	1.75 mm
serial_bus_type	I2C
standby_current_max	5.00E-5 Amp
Maximum supply voltage	0.0030 Amp
surface mount	YES
Craftsmanship	CMOS
Temperature level	INDUSTRIAL
terminal coating	MATTE TIN
Terminal form	GULL WING
Terminal spacing	1.27 mm
Terminal location	DUAL
ime_peak_reflow_temperature_max__s_	40
Maximum TWC of write cycle	1 ms
length	4.9 mm
width	3.9 mm
dditional_feature	DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED

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24C01C

1K 5.0V I

™

Serial EEPROM

Features:

• Single Supply with Operation from 4.5V to 5.5V

• Low-Power CMOS Technology:

- Read current 1 mA, max.

- Standby current 5

μA,

max.

• 2-Wire Serial Interface, I

C™ Compatible

• Cascadable up to Eight Devices

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• Page Write Time 1 ms max.

• Self-Timed Erase/Write Cycle

• 16-Byte Page Write Buffer

• ESD Protection >4000V

• More than 1 Million Erase/Write Cycles

• Data Retention >200 Years

• Factory Programming Available

• Packages include 8-lead PDIP, SOIC, TSSOP,

DFN, TDFN and MSOP

• Pb-Free and RoHS Compliant

• Temperature Ranges:

- Industrial (I):

-40°C to +85°C

- Automotive (E):

-40°C to +125°C

Description:

The Microchip Technology Inc. 24C01C is a 1K bit

Serial Electrically Erasable PROM with a voltage range

of 4.5V to 5.5V. The device is organized as a single

block of 128 x 8-bit memory with a 2-wire serial

interface. Low-current design permits operation with

max. standby and active currents of only 5

μA

and 1

mA, respectively. The device has a page write capabil-

ity for up to 16 bytes of data and has fast write cycle

times of only 1 ms for both byte and page writes. Func-

tional address lines allow the connection of up to eight

24C01C devices on the same bus for up to 8K bits of

contiguous EEPROM memory. The device is available

in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm),

8-pin 2x3 DFN and TDFN, 8-pin MSOP and TSSOP

packages.

Block Diagram

A0 A1 A2

HV Generator

Memory

Control

Logic

I/O

Control

Logic

XDEC

EEPROM

Array

SDA SCL

Sense Amp.

R/W Control

YDEC

Package Types

PDIP, MSOP

Test

SCL

SDA

SOIC, TSSOP

Test

SCL

SDA

DFN/TDFN

A0 1

A1 2

A2 3

8 V

7 Test

6 SCL

5 SDA

2008 Microchip Technology Inc.

DS21201J-page 1

24C01C Related Products

	24C01C	24C01C_08	24C01C-I/MNY	24C01C-I/P	24C01C-E/ST	24C01C-E/SN	24C01C-E/MS	24C01C-E/MNY
Description	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	8	8	8	8	8	8	8	8
Minimum operating temperature	-40 Cel	-40 Cel	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum operating temperature	85 Cel	85 Cel	85 °C	85 °C	125 °C	125 °C	125 °C	125 °C
memory width	8	8	8	8	8	8	8	8
organize	128X8	128X8	128X8	128X8	128X8	128X8	128X8	128X8
surface mount	YES	YES	YES	NO	YES	YES	YES	YES
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE
Terminal form	GULL WING	GULL WING	NO LEAD	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
length	4.9 mm	4.9 mm	3 mm	9.27 mm	4.4 mm	4.9 mm	3 mm	3 mm
width	3.9 mm	3.9 mm	2 mm	7.62 mm	3 mm	3.9 mm	3 mm	2 mm
Is it lead-free?	-	-	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	-	-	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	-	-	DFN	DIP	SOIC	SOIC	MSOP	DFN
package instruction	-	-	2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8	DIP, DIP8,.3	4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8	3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8	ROHS COMPLIANT, PLASTIC, MSOP-8	2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8
Contacts	-	-	8	8	8	8	8	8
Reach Compliance Code	-	-	compli	compli	compli	compli	compli	compli
Maximum clock frequency (fCLK)	-	-	0.4 MHz	0.4 MHz	0.4 MHz	0.4 MHz	0.4 MHz	0.4 MHz
Data retention time - minimum	-	-	200	200	200	200	200	200
Durability	-	-	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
I2C control byte	-	-	1010DDDR	1010DDDR	1010DDDR	1010DDDR	1010DDDR	1010DDDR
JESD-30 code	-	-	R-PDSO-N8	R-PDIP-T8	R-PDSO-G8	R-PDSO-G8	S-PDSO-G8	R-PDSO-N8
JESD-609 code	-	-	e4	e3	e3	e3	e3	e4
memory density	-	-	1024 bi	1024 bi	1024 bi	1024 bi	1024 bi	1024 bi
Memory IC Type	-	-	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
Humidity sensitivity level	-	-	1	-	1	1	1	1
word count	-	-	128 words	128 words	128 words	128 words	128 words	128 words
character code	-	-	128	128	128	128	128	128
Operating mode	-	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Package body material	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	-	HVSON	DIP	TSSOP	SOP	TSSOP	HVSON
Encapsulate equivalent code	-	-	SOLCC8,.11,20	DIP8,.3	TSSOP8,.25	SOP8,.25	TSSOP8,.19	SOLCC8,.11,20
Package shape	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	SQUARE	RECTANGULAR
Package form	-	-	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	IN-LINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial	-	-	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	-	-	260	NOT SPECIFIED	260	260	260	260
power supply	-	-	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	-	-	0.8 mm	5.334 mm	1.2 mm	1.75 mm	1.1 mm	0.8 mm
Serial bus type	-	-	I2C	I2C	I2C	I2C	I2C	I2C
Maximum standby current	-	-	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A
Maximum slew rate	-	-	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA
Maximum supply voltage (Vsup)	-	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	-	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	-	-	5 V	5 V	5 V	5 V	5 V	5 V
technology	-	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Terminal surface	-	-	NICKEL PALLADIUM GOLD	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	NICKEL PALLADIUM GOLD
Terminal pitch	-	-	0.5 mm	2.54 mm	0.65 mm	1.27 mm	0.65 mm	0.5 mm
Maximum time at peak reflow temperature	-	-	40	NOT SPECIFIED	40	40	40	40
Maximum write cycle time (tWC)	-	-	1 ms	1 ms	1.5 ms	1.5 ms	1.5 ms	1.5 ms
Base Number Matches	-	-	1	1	1	1	1	1

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