24C01C-E/MS datasheet, PDF - EEWORLD Datasheet

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24C01C-E/MS: Description128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8; Categorystorage storage; File Size416KB，30 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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24C01C-E/MS Overview

128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

24C01C-E/MS Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	MSOP
package instruction	ROHS COMPLIANT, PLASTIC, MSOP-8
Contacts	8
Reach Compliance Code	compli
Factory Lead Time	9 weeks
Maximum clock frequency (fCLK)	0.4 MHz
Data retention time - minimum	200
Durability	1000000 Write/Erase Cycles
I2C control byte	1010DDDR
JESD-30 code	S-PDSO-G8
JESD-609 code	e3
length	3 mm
memory density	1024 bi
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	8
word count	128 words
character code	128
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	128X8
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP8,.19
Package shape	SQUARE
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Maximum seat height	1.1 mm
Serial bus type	I2C
Maximum standby current	0.00005 A
Maximum slew rate	0.003 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	3 mm
Maximum write cycle time (tWC)	1.5 ms
Base Number Matches	1

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24C01C

1K 5.0V I

™

Serial EEPROM

Features:

• Single Supply with Operation from 4.5V to 5.5V

• Low-Power CMOS Technology:

- Read current 1 mA, max.

- Standby current 5

μA,

max.

• 2-Wire Serial Interface, I

C™ Compatible

• Cascadable up to Eight Devices

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• Page Write Time 1 ms max.

• Self-Timed Erase/Write Cycle

• 16-Byte Page Write Buffer

• ESD Protection >4000V

• More than 1 Million Erase/Write Cycles

• Data Retention >200 Years

• Factory Programming Available

• Packages include 8-lead PDIP, SOIC, TSSOP,

DFN, TDFN and MSOP

• Pb-Free and RoHS Compliant

• Temperature Ranges:

- Industrial (I):

-40°C to +85°C

- Automotive (E):

-40°C to +125°C

Description:

The Microchip Technology Inc. 24C01C is a 1K bit

Serial Electrically Erasable PROM with a voltage range

of 4.5V to 5.5V. The device is organized as a single

block of 128 x 8-bit memory with a 2-wire serial

interface. Low-current design permits operation with

max. standby and active currents of only 5

μA

and 1

mA, respectively. The device has a page write capabil-

ity for up to 16 bytes of data and has fast write cycle

times of only 1 ms for both byte and page writes. Func-

tional address lines allow the connection of up to eight

24C01C devices on the same bus for up to 8K bits of

contiguous EEPROM memory. The device is available

in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm),

8-pin 2x3 DFN and TDFN, 8-pin MSOP and TSSOP

packages.

Block Diagram

A0 A1 A2

HV Generator

Memory

Control

Logic

I/O

Control

Logic

XDEC

EEPROM

Array

SDA SCL

Sense Amp.

R/W Control

YDEC

Package Types

PDIP, MSOP

Test

SCL

SDA

SOIC, TSSOP

Test

SCL

SDA

DFN/TDFN

A0 1

A1 2

A2 3

8 V

7 Test

6 SCL

5 SDA

2008 Microchip Technology Inc.

DS21201J-page 1

24C01C-E/MS Related Products

	24C01C-E/MS	24C01C_08	24C01C-I/MNY	24C01C-I/P	24C01C-E/ST	24C01C-E/SN	24C01C-E/MNY	24C01C
Description	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8	128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
length	3 mm	4.9 mm	3 mm	9.27 mm	4.4 mm	4.9 mm	3 mm	4.9 mm
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	8	8	8	8	8	8	8	8
Maximum operating temperature	125 °C	85 Cel	85 °C	85 °C	125 °C	125 °C	125 °C	85 Cel
Minimum operating temperature	-40 °C	-40 Cel	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 Cel
organize	128X8	128X8	128X8	128X8	128X8	128X8	128X8	128X8
surface mount	YES	YES	YES	NO	YES	YES	YES	YES
Temperature level	AUTOMOTIVE	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	INDUSTRIAL
Terminal form	GULL WING	GULL WING	NO LEAD	THROUGH-HOLE	GULL WING	GULL WING	NO LEAD	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	3 mm	3.9 mm	2 mm	7.62 mm	3 mm	3.9 mm	2 mm	3.9 mm
Is it lead-free?	Lead free	-	Lead free	Lead free	Lead free	Lead free	Lead free	-
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	-
Parts packaging code	MSOP	-	DFN	DIP	SOIC	SOIC	DFN	-
package instruction	ROHS COMPLIANT, PLASTIC, MSOP-8	-	2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8	DIP, DIP8,.3	4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8	3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8	2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8	-
Contacts	8	-	8	8	8	8	8	-
Reach Compliance Code	compli	-	compli	compli	compli	compli	compli	-
Maximum clock frequency (fCLK)	0.4 MHz	-	0.4 MHz	0.4 MHz	0.4 MHz	0.4 MHz	0.4 MHz	-
Data retention time - minimum	200	-	200	200	200	200	200	-
Durability	1000000 Write/Erase Cycles	-	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	-
I2C control byte	1010DDDR	-	1010DDDR	1010DDDR	1010DDDR	1010DDDR	1010DDDR	-
JESD-30 code	S-PDSO-G8	-	R-PDSO-N8	R-PDIP-T8	R-PDSO-G8	R-PDSO-G8	R-PDSO-N8	-
JESD-609 code	e3	-	e4	e3	e3	e3	e4	-
memory density	1024 bi	-	1024 bi	1024 bi	1024 bi	1024 bi	1024 bi	-
Memory IC Type	EEPROM	-	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	-
Humidity sensitivity level	1	-	1	-	1	1	1	-
word count	128 words	-	128 words	128 words	128 words	128 words	128 words	-
character code	128	-	128	128	128	128	128	-
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	TSSOP	-	HVSON	DIP	TSSOP	SOP	HVSON	-
Encapsulate equivalent code	TSSOP8,.19	-	SOLCC8,.11,20	DIP8,.3	TSSOP8,.25	SOP8,.25	SOLCC8,.11,20	-
Package shape	SQUARE	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	-	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	IN-LINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	-
Parallel/Serial	SERIAL	-	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	-
Peak Reflow Temperature (Celsius)	260	-	260	NOT SPECIFIED	260	260	260	-
power supply	5 V	-	5 V	5 V	5 V	5 V	5 V	-
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
Maximum seat height	1.1 mm	-	0.8 mm	5.334 mm	1.2 mm	1.75 mm	0.8 mm	-
Serial bus type	I2C	-	I2C	I2C	I2C	I2C	I2C	-
Maximum standby current	0.00005 A	-	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	-
Maximum slew rate	0.003 mA	-	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	-
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-
Minimum supply voltage (Vsup)	4.5 V	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-
Nominal supply voltage (Vsup)	5 V	-	5 V	5 V	5 V	5 V	5 V	-
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	-
Terminal surface	Matte Tin (Sn)	-	NICKEL PALLADIUM GOLD	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	NICKEL PALLADIUM GOLD	-
Terminal pitch	0.65 mm	-	0.5 mm	2.54 mm	0.65 mm	1.27 mm	0.5 mm	-
Maximum time at peak reflow temperature	40	-	40	NOT SPECIFIED	40	40	40	-
Maximum write cycle time (tWC)	1.5 ms	-	1 ms	1 ms	1.5 ms	1.5 ms	1.5 ms	-
Base Number Matches	1	-	1	1	1	1	1	-

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