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KM44V16100BT-L6

Description
Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
Categorystorage    storage   
File Size341KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM44V16100BT-L6 Overview

Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

KM44V16100BT-L6 Parametric

Parameter NameAttribute value
Parts packaging codeTSOP2
package instructionSOP,
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-PDSO-G32
memory density67108864 bit
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports2
Number of terminals32
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX4
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
KM44V16000B, KM44V16100B
CMOS DRAM
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are
optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Fur-
thermore, Self-refresh operation is available in L-version. This 16Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- KM44V16000B/B-L(3.3V, 8K Ref.)
- KM44V16100B/B-L(3.3V, 4K Ref.)
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
Unit : mW
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V±0.3V power supply
Active Power Dissipation
Speed
-45
-5
-6
8K
360
324
288
4K
468
432
396
Refresh Cycles
Part
NO.
KM44V16000B*
KM44V16100B
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
L-ver
128ms
RAS
CAS
W
Control
Clocks
Vcc
Vss
FUNCTIONAL BLOCK DIAGRAM
VBB Generator
Refresh Control
Refresh Counter
Memory Array
16,777,216 x 4
Cells
Sense Amps & I/O
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Refresh Timer
Row Decoder
Data in
Buffer
DQ0
to
DQ3
Data out
Buffer
OE
Performance Range
Speed
-45
-5
-6
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
80ns
90ns
110ns
t
PC
31ns
35ns
40ns
A0~A12
(A0~A11)*1
A0~A10
(A0~A11)*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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