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M58WR032QT70ZB6

Description
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories
Categorystorage    storage   
File Size2MB,110 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M58WR032QT70ZB6 Overview

16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories

M58WR032QT70ZB6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionVFBGA, BGA56,7X8,30
Contacts56
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time70 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B56
JESD-609 codee0
length9 mm
memory density33554432 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,63
Number of terminals56
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA56,7X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8,1.8/2 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Department size4K,32K
Maximum standby current0.00005 A
Maximum slew rate0.045 mA
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width7.7 mm
M58WR016QT M58WR016QB
M58WR032QT M58WR032QB
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
Supply voltage
– V
DD
= 1.7V to 2V for Program, Erase and
Read
– V
DDQ
= 1.7V to 2.24V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random access: 60ns, 70ns, 80ns
Synchronous Burst Read Suspend
Programming time
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter blocks (top or bottom location)
Dual operations
– Program Erase in one bank while Read in
others
– No delay between Read and Write
operations
Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
Common Flash Interface (CFI)
100,000 program/erase cycles per block
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
Electronic signature
– Manufacturer Code: 20h
– Device Codes:
M58WR016QT (Top): 8812h.
M58WR016QB (Bottom): 8813h
M58WR032QT (Top): 8814h
M58WR032QB (Bottom): 8815h
ECOPACK® package available
November 2007
Rev 2
1/110
www.numonyx.com
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