Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR803
Thru
SDR817
Part Number/Ordering Information
1/
SDR
__ __
Designer’s Data Sheet
│ │
└
Screening
2/
__
= Not Screened
│ │
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
│ │
│
└
Pin Configuration
__ = Normal
(Cathode to Stud)
│
(See Table 1)
R = Reverse
(Anode to Stud)
│
└
Family/Voltage
803 = 50V
808 = 300V
813 = 700V
804 = 100V
809 = 350V
814 = 800V
805 = 150V
810 = 400V
815 = 900V
806 = 200V
811 = 500V
816 = 1000V
807 = 250V
812 = 600V
817 = 1100V
100A, 60nsec, 50-1100 V
Ultra Fast Recovery Rectifier
Features
:
•
•
•
•
•
•
•
•
Fast Recovery: 60nsec Maximum
Low Forward Voltage Drop
Low Reverse Leakage Current
Single Chip Construction
PIV to 1100 Volts
Hermetically Sealed
For High Efficiency Applications
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings
4/
SDR803
SDR804
SDR805
SDR806
SDR807
SDR808
SDR809
SDR810
SDR811
SDR812
SDR813
SDR814
SDR815
SDR816
SDR817
Symbol
Value
50
100
150
200
250
300
350
400
500
600
700
800
900
1000
1100
100
1000
800
700
600
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage @ 100µA
V
RRM
V
RWM
V
R
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25 °C)
SDR803 – 806
SDR807 – 809
SDR810 – 814
SDR815 – 817
Io
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25 °C)
I
FSM
T
OP
& T
STG
R
θJC
Amps
ºC
ºC/W
Operating & Storage Temperature
Thermal Resistance (
Junction to Case)
Notes:
-55 to +175
0.85
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I
F
= 500 mA, I
R
= 1 Amp, I
RR
= 250 mA.
4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0059G
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR803
Thru
SDR817
Symbol
SDR803 – 806
SDR807 – 810
SDR811 – 814
SDR815 – 817
SDR803 – 806
SDR807 – 810
SDR811 – 814
SDR815 – 817
T
A
= 25 ºC
T
A
= 100 ºC
T
A
= 25 ºC
V
F1
Electrical Characteristics
4/
Maximum Instantaneous Forward Voltage Drop
(
I
F
=100Adc,
T
A
= 25 ºC
, 300-500
μ
s Pulse)
Maximum Instantaneous Forward Voltage Drop
(
I
F
=100Adc,
T
A
= -55 ºC
, 300-500
μ
s Pulse)
Value
1.00
1.50
1.85
1.90
1.10
1.60
1.95
2.00
100
10
60
700
Units
V
DC
V
F2
I
R1
I
R2
t
RR
C
J
V
DC
μA
mA
nsec
pF
Maximum Reverse Leakage Current
(Rated V
R,
300μs minimum pulse)
Maximum Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1 Amp, I
RR
= 250 mA)
Maximum Junction Capacitance
(V
R
= 10V
DC
, T
A
= 25ºC, f = 1MHz)
Notes:
1/ For ordering information, Price, Operating Curves, and
Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I
F
= 500 mA, I
R
= 1 Amp, I
RR
= 250 mA.
4/ Unless Otherwise Specified, All Maximum Ratings/Electrical
Characteristics @25°C.
Table 1- PIN ASSIGNMENT
Code Configuration Terminal Stud
__
R
Normal
Reverse
Anode Cathode
Cathode Anode
DO-5 Outline (Normal Pin Configuration Shown):
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0059G
DOC
Embedded System
京公网安备 11010802033920号
EEWORLD
