£s.m.l-(Lon(hjickoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 378-8960
Silicon NPN Power Transistors
BD433/435/437
DESCRIPTION
•With TO-126 package
•Complement to type BD434/436/438
APPLICATIONS
•For medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
ECB
Fig.1 simplified outline (TO-126) and symbol
Absolute maximum ratings (Ta=25q
SYMBOL
PARAMETER
BD433
VCBO
Collector-base voltage
BD435
BD437
BD433
VCEO
Collector-emitter voltage
BD435
BD437
VEBO
Ic
ICM
IB
PC
T,
Tstg
CONDITIONS
VALUE
22
UNIT
Open emitter
32
45
22
V
Open base
32
45
V
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
5
4
7
1
V
A
A
A
W
L
i-
T
c
=25l_
36
150
-65-150
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25D unless otherwise specified
SYMBOL
PARAMETER
Collector-emitter
saturation voltage
BD433/435
lc=2A; I
B
=0.2A
BD437
BD433/435
VBE
BD433/435/437
CONDITIONS
MIN
TYP.
MAX
0.5
UNIT
Vcesat
0.2
0.6
1.1
V
Base-emitter on voltage
BD437
BD433
U-OA • \/,r— 1V
V
1.2
22
VcEO(SUS)
Collector-emitter
sustaining voltage
BD435
BD437
BD433
lc=0.1A; I
B
=0
32
45
V
V
CB
=22V; I
E
=0
VcB=32V; I
E
=0
V
CB
=45V; I
E
=0
Vce=22V; VBE=O
V
CE
=32V; V
BE
=0
VcE=45V; VBE=O
V
EB
=5V; I
G
=0
1
40
1^.— mm A • \A~c- R\
ICES
Collector cut-off current
BD435
BD437
BD433
100
[JA
ICES
Collector cut-off current
BD435
BD437
100
MA
IEBO
Emitter cut-off current
BD433/435
mA
hpE-1
DC current gain
BD437
130
30
hFE-2
DC current gain
BD433/435
lc=0.5A;V
C
E=1V
85
50
140
hpE-3
DC current gain
BD437
lc=2A;V
C
E=1V
40
ft
Transition frequency
lc=250mA;VcE=1V
3
MHz
8.5MAX
2.8MAX
0.75±oi
1 2 3
京公网安备 11010802033920号
EEWORLD
