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MJE18206AJ

Description
8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size543KB,67 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MJE18206AJ Overview

8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE18206AJ Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)13 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Data Sheet
SWITCHMODE
NPN
Designer's
Bipolar
Power Transistor for Electronic
Light Ballast and Switching
Power Supply Applications
The MJE/MJF18206 have an application specific state–of–the–art die dedicated to
the electronic ballast (“light ballast”) and power supply applications.
Improved Global Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for fast Turn–Off (No Current Tail)
Full Characterization at 125
_
C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
Two Package Choices: Standard TO–220 or Isolated TO–220
MJE18206
MJF18206
POWER TRANSISTORS
8 AMPERES
1200 VOLTS
40 and 100 WATTS
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VCBO
VCES
MJE18206
MJF18206
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
600
1200
1200
10
Collector–Emitter Voltage
Emitter–Base Voltage
VEBO
IC
ICM
IB
IBM
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
— Peak (1)
RMS Isolation Voltage (2)
(for 1 sec, R.H.
30%)
TC = 25°C
8
16
5
9
Per Figure 22
Per Figure 23
Per Figure 24
VISOL1
VISOL2
VISOL3
PD
4500
3500
1500
40
0.32
Volts
*Total Device Dissipation @ TC = 25°C
*Derate above 25
_
C
Operating and Storage Temperature
100
0.8
Watt
W/
_
C
TJ, Tstg
– 65 to 150
CASE 221A–06
TO–220AB
_
C
THERMAL CHARACTERISTICS
Rating
Symbol
R
θJC
R
θJA
TL
MJE18206
1.25
62.5
MJF18206
3.125
62.5
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
_
C/W
_
C
260
CASE 221D–02
TO–220 FULLPACK
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
(2) Proper strike and creepage distance must be provided.
v
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Motorola Bipolar Power Transistor Device Data
3–769
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