APTM10DUM02
Dual Common Source
MOSFET Power Module
D1
Q1
D2
Q2
V
DSS
= 100V
R
DSon
= 2.25mΩ typ @ Tj = 25°C
I
D
= 495A @ Tc = 25°C
Application
•
AC Switches
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
G1
G2
S1
S
S2
G1
S1
D1
S
D2
Features
•
Power MOS V
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
•
Kelvin source for easy drive
•
Very low stray inductance
- Symmetrical design
- M5 power connectors
•
High level of integration
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Low profile
S2
G2
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTM10DUM02– Rev 0 May, 2005
Max ratings
100
495
370
1900
±30
2.5
1250
100
50
3000
Unit
V
A
V
mΩ
W
A
APTM10DUM02
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V,V
DS
= 100V
V
GS
= 0V,V
DS
= 80V
Min
T
j
= 25°C
T
j
= 125°C
Typ
V
GS
= 10V, I
D
= 200A
V
GS
= V
DS
, I
D
= 10mA
V
GS
= ±30 V, V
DS
= 0V
2.25
2
Max
400
2000
2.5
4
±400
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
Bus
= 50V
I
D
= 400A
Inductive switching
V
GS
= 15V
V
Bus
= 66V
I
D
= 400A
R
G
= 1.25Ω
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 400A, R
G
=1.25Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 66V
I
D
= 400A, R
G
= 1.25Ω
Min
Typ
40
15.7
5.9
1360
240
720
160
240
500
160
2.2
2.41
2.43
2.56
Max
Unit
nF
nC
ns
mJ
mJ
Source - Drain diode ratings and characteristics
Symbol
I
S
V
SD
dv/dt
t
rr
Q
rr
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C
Tc = 80°C
V
GS
= 0V, I
S
= - 400A
I
S
= - 400A
V
R
= 66V
di
S
/dt = 400A/µs
T
j
= 25°C
T
j
= 25°C
270
11.6
Max
495
370
1.3
5
Unit
A
V
V/ns
ns
µC
APTM10DUM02– Rev 0 May, 2005
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
≤
- 495A di/dt
≤
400A/µs
V
R
≤
V
DSS
T
j
≤
150°C
APT website – http://www.advancedpower.com
2-6
APTM10DUM02
Thermal and package characteristics
Symbol
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Characteristic
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz
Min
2500
-40
-40
-40
3
2
Typ
Max
0.1
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
For terminals
M6
M5
Package outline
(dimensions in mm)
APT website – http://www.advancedpower.com
3-6
APTM10DUM02– Rev 0 May, 2005
APTM10DUM02
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
Thermal Impedance (°C/W)
0.1
0.08
0.06
0.04
0.02
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
480
I
D
, Drain Current (A)
V
GS
=15V, 10V & 9V
2500
I
D
, Drain Current (A)
2000
1500
Transfert Characteristics
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
400
320
240
160
80
0
8V
1000
7V
500
0
0
4
8
12
16
20
6V
T
J
=25°C
T
J
=125°C
T
J
=-55°C
24
28
0
V
DS
, Drain to Source Voltage (V)
R
DS(on)
vs Drain Current
1.2
I
D
, DC Drain Current (A)
Normalized to
V
GS
=10V @ 200A
2
3
4
5
6
V
GS
, Gate to Source Voltage (V)
1
7
R
DS(on)
Drain to Source ON Resistance
DC Drain Current vs Case Temperature
500
400
300
200
100
0
1.1
V
GS
=10V
1
0.9
0.8
0
100
200
300
400
500
I
D
, Drain Current (A)
V
GS
=20V
25
50
75
100
125
150
T
C
, Case Temperature (°C)
APTM10DUM02– Rev 0 May, 2005
APT website – http://www.advancedpower.com
4-6
APTM10DUM02
RDS(on), Drain to Source ON resistance
(Normalized)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
V
GS
(TH), Threshold Voltage
(Normalized)
I
D
, Drain Current (A)
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
Maximum Safe Operating Area
V
GS
=10V
I
D
= 200A
10000
limited by
R
DSon
1000
100µs
1ms
10ms
100
10
Single pulse
T
J
=150°C
1
10
100
V
DS
, Drain to Source Voltage (V)
1
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
14
12
10
8
6
4
2
0
0
400
800
1200
1600
2000
Gate Charge (nC)
V
DS
=50V
V
DS
=80V
I
D
=400A
T
J
=25°C
V
DS
=20V
C, Capacitance (pF)
Coss
10000
Crss
1000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
APT website – http://www.advancedpower.com
5-6
APTM10DUM02– Rev 0 May, 2005
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