82S185/BVA datasheet, PDF - EEWORLD Datasheet

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82S185/BVA: DescriptionIC 2K X 4 OTPROM, 115 ns, CDIP18, 0.300 INCH, CERAMIC, DIP-18, Programmable ROM; Categorystorage storage; File Size68KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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82S185/BVA Overview

IC 2K X 4 OTPROM, 115 ns, CDIP18, 0.300 INCH, CERAMIC, DIP-18, Programmable ROM

82S185/BVA Parametric

Parameter Name	Attribute value
Maker	NXP
Parts packaging code	DIP
package instruction	DIP,
Contacts	18
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	115 ns
JESD-30 code	R-GDIP-T18
memory density	8192 bit
Memory IC Type	OTP ROM
memory width	4
Number of functions	1
Number of terminals	18
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2KX4
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	BIPOLAR
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm

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82S185/BVA Related Products

	82S185/BVA	82S185/BYA	82S185A/BYA	82S185B/BYA	82S185A/BVA	82S185B/BVA
Description	IC 2K X 4 OTPROM, 115 ns, CDIP18, 0.300 INCH, CERAMIC, DIP-18, Programmable ROM	IC 2K X 4 OTPROM, 115 ns, CDFP18, CERAMIC, FP-18, Programmable ROM	IC 2K X 4 OTPROM, 55 ns, CDFP18, CERAMIC, FP-18, Programmable ROM	IC 2K X 4 OTPROM, 90 ns, CDFP18, CERAMIC, FP-18, Programmable ROM	IC 2K X 4 OTPROM, 55 ns, CDIP18, 0.300 INCH, CERAMIC, DIP-18, Programmable ROM	IC 2K X 4 OTPROM, 90 ns, CDIP18, 0.300 INCH, CERAMIC, DIP-18, Programmable ROM
Maker	NXP	NXP	NXP	NXP	NXP	NXP
Parts packaging code	DIP	DFP	DFP	DFP	DIP	DIP
package instruction	DIP,	DFP,	DFP,	DFP,	DIP,	DIP,
Contacts	18	18	18	18	18	18
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	115 ns	115 ns	55 ns	90 ns	55 ns	90 ns
JESD-30 code	R-GDIP-T18	R-CDFP-F18	R-CDFP-F18	R-CDFP-F18	R-GDIP-T18	R-GDIP-T18
memory density	8192 bit	8192 bit	8192 bit	8192 bit	8192 bit	8192 bit
Memory IC Type	OTP ROM	OTP ROM	OTP ROM	OTP ROM	OTP ROM	OTP ROM
memory width	4	4	4	4	4	4
Number of functions	1	1	1	1	1	1
Number of terminals	18	18	18	18	18	18
word count	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words
character code	2000	2000	2000	2000	2000	2000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	2KX4	2KX4	2KX4	2KX4	2KX4	2KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DFP	DFP	DFP	DIP	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	FLATPACK	FLATPACK	FLATPACK	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	YES	YES	NO	NO
technology	BIPOLAR	BIPOLAR	BIPOLAR	BIPOLAR	BIPOLAR	BIPOLAR
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	THROUGH-HOLE	FLAT	FLAT	FLAT	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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