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IDT7MB6040S20K

Description
Cache SRAM Module, 32KX64, 30ns, CMOS
Categorystorage    storage   
File Size144KB,6 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric Compare View All

IDT7MB6040S20K Overview

Cache SRAM Module, 32KX64, 30ns, CMOS

IDT7MB6040S20K Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Maximum access time30 ns
Maximum clock frequency (fCLK)20 MHz
I/O typeCOMMON
JESD-30 codeR-XQMA-P128
JESD-609 codee0
memory density2097152 bit
Memory IC TypeCACHE SRAM MODULE
memory width64
Number of functions1
Number of terminals128
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeQIP
Encapsulate equivalent codeQI128,2.1/2.3,100
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum slew rate4.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED

IDT7MB6040S20K Related Products

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Description Cache SRAM Module, 32KX64, 30ns, CMOS Cache SRAM Module, 32KX64, 45ns, CMOS Cache SRAM Module, 32KX64, 35ns, CMOS Cache SRAM Module, 32KX64, 24ns, CMOS
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 30 ns 45 ns 35 ns 24 ns
Maximum clock frequency (fCLK) 20 MHz 12 MHz 16.7 MHz 25 MHz
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-XQMA-P128 R-XQMA-P128 R-XQMA-P128 R-XQMA-P128
JESD-609 code e0 e0 e0 e0
memory density 2097152 bit 2097152 bit 2097152 bit 2097152 bit
Memory IC Type CACHE SRAM MODULE CACHE SRAM MODULE CACHE SRAM MODULE CACHE SRAM MODULE
memory width 64 64 64 64
Number of functions 1 1 1 1
Number of terminals 128 128 128 128
word count 32768 words 32768 words 32768 words 32768 words
character code 32000 32000 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 32KX64 32KX64 32KX64 32KX64
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code QIP QIP QIP QIP
Encapsulate equivalent code QI128,2.1/2.3,100 QI128,2.1/2.3,100 QI128,2.1/2.3,100 QI128,2.1/2.3,100
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum slew rate 4.05 mA 3.75 mA 3.75 mA 4.5 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location QUAD QUAD QUAD QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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