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DDTC114YLP-7B

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size527KB,8 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

DDTC114YLP-7B Overview

Small Signal Bipolar Transistor

DDTC114YLP-7B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes
package instructionCHIP CARRIER, R-PBCC-N3
Reach Compliance Codecompliant
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 4.7
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)180
JESD-30 codeR-PBCC-N3
JESD-609 codee4
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DDTCxxxxLP (R1R2 Series)
NPN PRE-BIASED (R1≠R2) SMALL SIGNAL IN DFN1006
Product Summary
Part Number
DDTC123JLP
DDTC143ZLP
DDTC114YLP
R1 (NOM)
2.2kΩ
4.7kΩ
10kΩ
R2 (NOM)
47kΩ
47kΩ
47kΩ
Marking
N0
N1
N2
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Marking Information
Terminals: Finish
NiPdAu Solderable per MIL-STD-202,
Method 208
e4
Weight: 0.0009 grams (Approximate)
Features
Epitaxial Planar Die Construction
Ultra-Small Leadless Surface Mount Package
Ideally Suited for Automated Assembly Processes
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
X1-DFN1006-3
3
2
C
3
OUT
E
B
IN
B
1
2
E
C
3
OUT
IN
1
B
C
R
1
R
2
R
1
R
2
1
GND
E
2
GND
Bottom View
Package Pin Out
Configuration
Device Schematics
Ordering Information
(Note 4)
Part Number
DDTC123JLP-7
DDTC143ZLP-7
DDTC114YLP-7
DDTC123JLP-7B
DDTC143ZLP-7B
DDTC114YLP-7B
Notes:
Marking
N0
N1
N2
N0
N1
N2
Reel size (inches)
7
7
7
7
7
7
Tape width (mm)
8
8
8
8
8
8
Quantity per reel
3,000
3,000
3,000
10,000
10,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Nx
DDTC123JLP-7
DDTC143ZLP-7
DDTC114YLP-7
Nx
Nx
Nx
Nx
Nx
Nx
Top View
Dot Denotes Collector Side
From date code 1527 (YYWW),
this changes to:
Nx
Top View
Bar Denotes Base and Emitter Side
Nx
DDTC123JLP-7B
DDTC143ZLP-7B
Nx
Nx
Nx
DDTC114YLP-7B
Top View
Bar Denotes Base and Emitter Side
Nx = Part Type Marking Code
(see Ordering Information)
DDTCxxxxLP (R1R2 Series)
Document number: DS30755 Rev. 8 - 2
1 of 8
www.diodes.com
January 2016
© Diodes Incorporated

DDTC114YLP-7B Related Products

DDTC114YLP-7B DDTC114YLP-7 DDTC123JLP-7B
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Is it Rohs certified? conform to - conform to
Maker Diodes - Diodes
package instruction CHIP CARRIER, R-PBCC-N3 - CHIP CARRIER, R-PBCC-N3
Reach Compliance Code compliant - compliant
Other features BUILT IN BIAS RESISTANCE RATIO IS 4.7 - BUILT IN BIAS RESISTANCE RATIO IS 21.36
Shell connection COLLECTOR - COLLECTOR
Maximum collector current (IC) 0.1 A - 0.1 A
Collector-emitter maximum voltage 50 V - 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 180 - 180
JESD-30 code R-PBCC-N3 - R-PBCC-N3
JESD-609 code e4 - e4
Humidity sensitivity level 1 - 1
Number of components 1 - 1
Number of terminals 3 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form CHIP CARRIER - CHIP CARRIER
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type NPN - NPN
surface mount YES - YES
Terminal surface Nickel/Palladium/Gold (Ni/Pd/Au) - Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form NO LEAD - NO LEAD
Terminal location BOTTOM - BOTTOM
Maximum time at peak reflow temperature 30 - 30
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 250 MHz - 250 MHz
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