The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 20 June 2013.
INCH-POUND
MIL-PRF-19500/685F
6 May 2013
SUPERSEDING
MIL-PRF-19500/685E
22 April 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1
(TOTAL DOSE AND SINGLE EVENT EFFECTS),
JANTXVR AND JANSR
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-Channel, enhancement-mode,
MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy
maximum rating (E
AS
) and maximum avalanche current (I
AS
). Two levels of product assurance are provided for each
device type as specified in MIL-PRF-19500. See 6.5 for JANHC and JANKC die versions.
1.2 Physical dimensions. See figure 1, (TO-254AA).
1.3 Maximum ratings. T
A
= +25°C, unless otherwise specified.
Type
P
T
(1)
T
C
=
+25°C
W
2N7475T1
2N7476T1
2N7477T1
208
208
208
P
T
T
A
=
+25°C
W
3.0
3.0
3.0
R
θJC
(2)
°C/W
0.60
0.60
0.60
V
DS
V
DG
V
GS
I
D1
(3) (4)
T
C
=+25°C
I
D2
(3) (4)
T
C
=
+100°C
A dc
45
29
23.5
I
S
I
DM
(5)
T
J
and
T
STG
°C
-55
to
+150
V dc
130
200
250
V dc
130
200
250
V dc
+20
+20
+20
A dc
45
45
37
A dc
45
45
37
A (pk)
180
180
148
(1) Derate linearly 1.67 W/°C for T
C
> +25°C.
(2) See figure 2, thermal impedance curves.
(3) The following formula derives the maximum theoretical I
D
specs. I
D
is limited to 45 A by package and device
construction:
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
(4) See figure 3, maximum drain current graph.
(5) I
DM
= 4 X I
D1
as defined in note (3).
*
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil
. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
https://assist.dla.mil .
AMSC N/A
FSC 5961
MIL-PRF-19500/685F
1.4 Primary electrical characteristics at T
C
= +25°C.
Type
Min V
(BR)DSS
V
GS
= 0
I
D
= 1.0 mA
dc
V
GS(TH)1
V
DS
> V
GS
I
D
= 1.0 mA dc
Max I
DSS1
V
GS
= 0
V
DS
= 80
percent
of rated V
DS
Max r
DS(on)
(1)
V
GS
= 12V, I
D
= I
D2
E
AS
T
J
= +25°C
V dc
2N7475T1
2N7476T1
2N7477T1
130
200
250
V dc
Min
Max
2.5
4.5
2.5
4.5
2.5
4.5
µA
dc
10
10
10
Ω
0.0145
0.044
0.061
T
J
= +150°C
Ω
0.033
0.101
0.153
mJ
432
256
258
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://quicksearch.assist.dla.mil/
or
https://assist.dla.mil/
or from
the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/685F
Dimensions
Ltr
Inches
Min
BL
CH
LD
LL
LO
LS
MHD
MHO
TL
TT
TW
Term 1
Term 2
Term 3
.535
.249
.035
.510
Max
.545
.260
.045
.570
Millimeters
Min
13.59
6.32
0.89
12.95
Max
13.84
6.60
1.14
14.48
5
Notes
.150 BSC
.150 BSC
.139
.665
.790
.040
.535
.149
.685
.800
.050
.545
3.81 BSC
3.81 BSC
3.53
16.89
20.07
1.02
13.59
3.78
17.40
20.32
1.27
13.84
4
Drain
Source
Gate
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. All terminals are isolated from case.
4. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
5. Protrusion thickness of ceramic eyelets included in dimension LL.
FIGURE 1. Dimensions and configuration (TO-254AA).
3
MIL-PRF-19500/685F
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, and figure 1 (TO-254AA) herein. Methods used for electrical isolation of the terminals shall employ
materials that contain a minimum of 90 percent Al
2
O
3
(ceramic).
3.4.1 Lead formation and finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500
and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). When
lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with
screen 14 of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein.
3.4.2 Internal construction. Multiple chip construction shall not be permitted.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of
the country of origin may be omitted from the body, but shall be retained on the initial container.
3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge
protection.
3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation
of static charge. However, the following handling practices are recommended (see 3.6).
a.
b.
c.
d.
e.
f.
g.
Devices should be handled on benches with conductive handling devices.
Ground test equipment, tools, and personnel handling devices.
Do not handle devices by the leads.
Store devices in conductive foam or carriers.
Avoid use of plastic, rubber, or silk in MOS areas.
Maintain relative humidity above 50 percent if practical.
Care should be exercised during test and troubleshooting to apply not more than maximum rated
voltage to any lead.
Gate must be terminated to source, R
≤
or 100 kΩ, whenever bias voltage is applied drain to source.
h.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4 and table I herein.
3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4
MIL-PRF-19500/685F
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I and II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
*
4.2.1.1 SEE. SEE shall be performed at initial qualification and after process or design changes which may affect
radiation hardness (see
table III
and
table IV).
Upon qualification, manufacturers shall provide the verification test
conditions from section 5 of method 1080 of
MIL-STD-750
that were used to qualify the device for inclusion into
section 6 of the slash sheet. End-point measurements shall be in accordance with
table II.
SEE characterization
data shall be made available upon request of the qualifying or acquiring activity.
5
京公网安备 11010802033920号
EEWORLD
