IRLR8726PBF_09 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > semiconductor> Discrete semiconductor> IRLR8726PBF_09

IRLR8726PBF_09: Description86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; Categorysemiconductor Discrete semiconductor; File Size355KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

Download Datasheet Parametric Compare View All

IRLR8726PBF_09 Overview

86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

IRLR8726PBF_09 Parametric

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	30 V
Processing package description	ROHS COMPLIANT, DPAK, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN OVER NICKEL
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	86 A
Rated avalanche energy	120 mJ
Maximum drain on-resistance	0.0580 ohm
Maximum leakage current pulse	340 A

Preview

Download Datasheet

View All

PD - 97146A

IRLR8726PbF

IRLU8726PbF

HEXFET

Power MOSFET

Applications

High Frequency Synchronous Buck

DSS

DS(on)

max

Qg (typ.)

Converters for Computer Processor Power

30V 5.8m @V

= 10V 15nC

High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

Benefits

Very Low R

DS(on)

at 4.5V V

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

Lead-Free

RoHS compliant

D-Pak

IRLR8726PbF

I-Pak

IRLU8726PbF

Gate

Drain

Max.

± 20

Source

Units

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

= 100°C

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

340

W/°C

°C

0.5

-55 to + 175

300 (1.6mm from case)

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Typ.

Max.

2.0

110

Units

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

ghÃ

–––

Notes

through

are on page 11

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

www.irf.com

11/23/09

IRLR8726PBF_09 Related Products

	IRLR8726PBF_09	IRLR8726TRPBF	IRLU8726PbF	IRLR8726PbF
Description	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Number of terminals	2	2	3	2
surface mount	Yes	YES	NO	YES
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Number of components	1	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	-	Lead free	Lead free	Lead free
Is it Rohs certified?	-	conform to	conform to	conform to
Maker	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	-	TO-252AA	TO-251AA	TO-252AA
package instruction	-	SMALL OUTLINE, R-PSSO-G2	ROHS COMPLIANT, IPAK-3	SMALL OUTLINE, R-PSSO-G2
Contacts	-	3	3	3
Reach Compliance Code	-	compliant	not_compliant	compliant
ECCN code	-	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	-	120 mJ	120 mJ	120 mJ
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	30 V	30 V	30 V
Maximum drain current (Abs) (ID)	-	86 A	86 A	86 A
Maximum drain current (ID)	-	86 A	86 A	86 A
Maximum drain-source on-resistance	-	0.058 Ω	0.058 Ω	0.058 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	-	TO-252AA	TO-251AA	TO-252AA
JESD-30 code	-	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2
JESD-609 code	-	e3	e3	e3
Humidity sensitivity level	-	1	1	1
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	175 °C	175 °C	175 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	260	260	260
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	-	75 W	75 W	75 W
Maximum pulsed drain current (IDM)	-	340 A	340 A	340 A
Certification status	-	Not Qualified	Not Qualified	Not Qualified
Terminal surface	-	MATTE TIN OVER NICKEL	Matte Tin (Sn) - with Nickel (Ni) barrier	MATTE TIN OVER NICKEL
Maximum time at peak reflow temperature	-	30	30	30

Recommended Resources

OCL quasi-complementary power amplifier circuit diagram

555 light controlled oscillator

gate circuit

Pulse input signal conditioning circuit

STK0100-2 power amplifier circuit

2～20MHz variable frequency transistor oscillator

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components