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IRLR8726PbF

Description
86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
CategoryDiscrete semiconductor    The transistor   
File Size355KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRLR8726PbF Overview

86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

IRLR8726PbF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)120 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)86 A
Maximum drain current (ID)86 A
Maximum drain-source on-resistance0.058 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)340 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 97146A
IRLR8726PbF
IRLU8726PbF
HEXFET
®
Power MOSFET
Applications
l
High Frequency Synchronous Buck
V
DSS
R
DS(on)
max
Qg (typ.)
Converters for Computer Processor Power
30V 5.8m @V
GS
= 10V 15nC
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
D
D
for Telecom and Industrial Use
:
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
Lead-Free
l
RoHS compliant
G
D
S
G
D
S
D-Pak
IRLR8726PbF
G
D
I-Pak
IRLU8726PbF
S
Gate
Drain
Max.
30
± 20
86
Source
Units
V
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
h
Maximum Power Dissipation
h
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
™
f
61
f
340
75
38
A
W
W/°C
°C
0.5
-55 to + 175
300 (1.6mm from case)
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
h
Typ.
Max.
2.0
50
110
Units
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
h
ghÃ
–––
–––
–––
Notes

through
†
are on page 11
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
11/23/09

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Description 86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
Number of terminals 2 2 2 3
surface mount YES Yes YES NO
Terminal form GULL WING GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it lead-free? Lead free - Lead free Lead free
Is it Rohs certified? conform to - conform to conform to
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-252AA - TO-252AA TO-251AA
package instruction SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2 ROHS COMPLIANT, IPAK-3
Contacts 3 - 3 3
Reach Compliance Code compliant - compliant not_compliant
ECCN code EAR99 - EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 120 mJ - 120 mJ 120 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V - 30 V 30 V
Maximum drain current (Abs) (ID) 86 A - 86 A 86 A
Maximum drain current (ID) 86 A - 86 A 86 A
Maximum drain-source on-resistance 0.058 Ω - 0.058 Ω 0.058 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA - TO-252AA TO-251AA
JESD-30 code R-PSSO-G2 - R-PSSO-G2 R-PSIP-T3
JESD-609 code e3 - e3 e3
Humidity sensitivity level 1 - 1 1
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C - 175 °C 175 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 - 260 260
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 75 W - 75 W 75 W
Maximum pulsed drain current (IDM) 340 A - 340 A 340 A
Certification status Not Qualified - Not Qualified Not Qualified
Terminal surface MATTE TIN OVER NICKEL - MATTE TIN OVER NICKEL Matte Tin (Sn) - with Nickel (Ni) barrier
Maximum time at peak reflow temperature 30 - 30 30
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