IRLU8726PbF datasheet, PDF - EEWORLD Datasheet

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IRLU8726PbF: Description86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA; CategoryDiscrete semiconductor The transistor; File Size355KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRLU8726PbF Overview

86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

IRLU8726PbF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-251AA
package instruction	ROHS COMPLIANT, IPAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	120 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	86 A
Maximum drain current (ID)	86 A
Maximum drain-source on-resistance	0.058 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	340 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 97146A

IRLR8726PbF

IRLU8726PbF

HEXFET

Power MOSFET

Applications

High Frequency Synchronous Buck

DSS

DS(on)

max

Qg (typ.)

Converters for Computer Processor Power

30V 5.8m @V

= 10V 15nC

High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

Benefits

Very Low R

DS(on)

at 4.5V V

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

Lead-Free

RoHS compliant

D-Pak

IRLR8726PbF

I-Pak

IRLU8726PbF

Gate

Drain

Max.

± 20

Source

Units

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

= 100°C

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

340

W/°C

°C

0.5

-55 to + 175

300 (1.6mm from case)

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Typ.

Max.

2.0

110

Units

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

ghÃ

–––

Notes

through

are on page 11

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

www.irf.com

11/23/09

IRLU8726PbF Related Products

	IRLU8726PbF	IRLR8726PBF_09	IRLR8726TRPBF	IRLR8726PbF
Description	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Number of components	1	1	1	1
Number of terminals	3	2	2	2
surface mount	NO	Yes	YES	YES
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Lead free	-	Lead free	Lead free
Is it Rohs certified?	conform to	-	conform to	conform to
Maker	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-251AA	-	TO-252AA	TO-252AA
package instruction	ROHS COMPLIANT, IPAK-3	-	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	-	3	3
Reach Compliance Code	not_compliant	-	compliant	compliant
ECCN code	EAR99	-	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	120 mJ	-	120 mJ	120 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	-	30 V	30 V
Maximum drain current (Abs) (ID)	86 A	-	86 A	86 A
Maximum drain current (ID)	86 A	-	86 A	86 A
Maximum drain-source on-resistance	0.058 Ω	-	0.058 Ω	0.058 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA	-	TO-252AA	TO-252AA
JESD-30 code	R-PSIP-T3	-	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	-	e3	e3
Humidity sensitivity level	1	-	1	1
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	-	175 °C	175 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	-	260	260
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	75 W	-	75 W	75 W
Maximum pulsed drain current (IDM)	340 A	-	340 A	340 A
Certification status	Not Qualified	-	Not Qualified	Not Qualified
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier	-	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL
Maximum time at peak reflow temperature	30	-	30	30

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